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IRFD322

Harris Semiconductor

IRFD322 by Harris Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Operating Temperature: 150 Cel; Package Style (Meter): IN-LINE;

Median Price

$1.600

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,111 parts In-Stock

1+ parts

-

100+ parts

$1.460

1k+ parts

$1.310

10k+ parts

$1.230

1,111

-

$1.460

$1.310

$1.230

DigiKey

USA . 1,111 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.600

10k+ parts

-

1,111

-

-

$1.600

-

Verical

USA . 1,111 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.637

10k+ parts

$1.538

1,111

-

-

$1.637

$1.538

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 6,749 parts In-Stock

1+ parts

$10.140

100+ parts

-

1k+ parts

-

10k+ parts

-

6,749

$10.140

-

-

-

Supply Digital

USA . 411 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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411

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-

-

Technical Specifications

Small Signal Field Effect Transistors (FET) IRFD322 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Harris Semiconductor

Specs

Minimum DS Breakdown Voltage:

400 V

Maximum Drain Current (Abs) (ID):

.4 A

Maximum Drain Current (ID):

.4 A

Maximum Drain-Source On Resistance:

2.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDIP-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRFD322 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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