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HUF75345S3S

Harris Semiconductor

HUF75345S3S by Harris Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 215 W; Terminal Form: GULL WING; Transistor Element Material: SILICON;

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Legend Electronics Inc.

USA . 5,940 parts In-Stock

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Vyrian

USA . 386 parts In-Stock

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Digiode

USA . 237 parts In-Stock

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237

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Bristol Electronics

USA . 79 parts In-Stock

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79

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Distributors (Availability)

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Andel Nordic

Denmark . 453 parts In-Stock

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$9.610

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$9.225

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$9.225

453

$9.610

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$9.225

A-Z Elektronik GmbH

Germany . 6,882 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,588 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Glotronic Ltd.

UK . 1,965 parts In-Stock

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Supply Digital

USA . 1,093 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Corphita

USA . 564 parts In-Stock

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Technical Specifications

Power Field Effect Transistors (FET) HUF75345S3S attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Harris Semiconductor

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

55 V

Maximum Drain Current (Abs) (ID):

75 A

Maximum Drain Current (ID):

75 A

Maximum Drain-Source On Resistance:

.007 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

215 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

115 ns

Maximum Turn On Time (ton):

145 ns

Trade Compliance

HUF75345S3S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

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