Loading...

TN0200T

General Semiconductor

TN0200T by General Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JEDEC-95 Code: TO-236AB; Minimum DS Breakdown Voltage: 20 V; Maximum Drain-Source On Resistance: .5 ohm;

Median Price

$0.105

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 87,206 parts In-Stock

1+ parts

$0.100

100+ parts

-

1k+ parts

-

10k+ parts

-

87,206

$0.100

-

-

-

Maritex

Poland . 1,449 parts In-Stock

1+ parts

$0.109

100+ parts

$0.096

1k+ parts

$0.087

10k+ parts

-

1,449

$0.109

$0.096

$0.087

-

Sinequanon

UK . 3,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,400

-

-

-

-

LIBRA Elektronik GmbH

Germany . 1,536 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,536

-

-

-

-

Zilex Electronics Inc.

Canada . 1,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,500

-

-

-

-

Huijzer Components

Netherlands . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Pegasus Components GmbH

Germany . 842 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

842

-

-

-

-

Prism Electronics

USA . 173 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

173

-

-

-

-

Technical Specifications

Small Signal Field Effect Transistors (FET) TN0200T attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from General Semiconductor

Specs

Configuration:

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

.73 A

Maximum Drain-Source On Resistance:

.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TN0200T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

General Semiconductor

Vishay General Semiconductor traces its origins to the founding of the Semiconductor Components Division of General Instrument, in Hicksville, New York in 1960. In 1997, the power semiconductor business of General Instrument became an independent, publicly traded company, General Semiconductor. The same year, General Semiconductor acquired the small signal diode business of ITT Industries. Inc. With the acquisition of General Semiconductor in 2001, Vishay Intertechnology joined the top ranks of discrete semiconductor manufacturers and became a market and technology leader in power rectifiers and TVS avalanche breakdown diodes. Today, Vishay General Semiconductor serves a very wide range of customers with devices that can be used as rectifiers, signal limiters, voltage regulators, switches, signal modulators, signal mixers, signal demodulators, and oscillators. Vishay General Semiconductor customers include leading manufacturers of consumer electronics, lighting, telecommunications equipment, computers, and automotive products.

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.