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2N3419

General Semiconductor

2N3419 by General Semiconductor

Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Package Body Material: METAL; Transistor Element Material: SILICON; Qualification: Not Qualified;

Median Price

$9.490

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

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American Microsemiconductor Inc.

USA . 49 parts In-Stock

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$9.490

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Vyrian

USA . 6,912 parts In-Stock

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Digiode

USA . 3,956 parts In-Stock

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PUI

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MISTER SPROCKETS

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ECAB

Sweden . 30 parts In-Stock

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Resion

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Holdelec - ElecDif-Pro

France . 21 parts In-Stock

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ACDS - Activité Composants Distribution Service

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Electronic Expediters

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Parana Technologies

USA . 466 parts In-Stock

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$0.311

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$1.551

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DigiPath Technology Company

USA . 232 parts In-Stock

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$0.342

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$0.315

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IDEA Electronic Components Group

UK . 1,211 parts In-Stock

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$0.349

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$0.314

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ChromeModa Solutions

Germany . 122 parts In-Stock

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$0.349

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$0.286

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Native Components

USA . 459 parts In-Stock

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$2.000

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Northwest PG Solutions

USA . 102 parts In-Stock

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AZTECH Wire

Italy . 681 parts In-Stock

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$5.915

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One Stop Electronics

USA . 398 parts In-Stock

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$15.050

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Microchip USA

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$51.503

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Component Stockers USA

USA . 230 parts In-Stock

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$99.990

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Fulton Briggs Corp.

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Glotronic Ltd.

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Corphita

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Authorized Procurement Solutions

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Perfect Parts

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Assy Fe

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Cyclops Electronics Ltd (Excess)

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Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N3419 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from General Semiconductor

Specs

Configuration:

JEDEC-95 Code:

TO-5

JESD-30 Code:

O-MBCY-W3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation Ambient:

15 W

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2N3419 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

5961-00-924-4045, 5961009244045, 5961-99-118-1677, 5961991181677

NIIN

009244045, 991181677

Manufacturer Highlights

General Semiconductor

Vishay General Semiconductor traces its origins to the founding of the Semiconductor Components Division of General Instrument, in Hicksville, New York in 1960. In 1997, the power semiconductor business of General Instrument became an independent, publicly traded company, General Semiconductor. The same year, General Semiconductor acquired the small signal diode business of ITT Industries. Inc. With the acquisition of General Semiconductor in 2001, Vishay Intertechnology joined the top ranks of discrete semiconductor manufacturers and became a market and technology leader in power rectifiers and TVS avalanche breakdown diodes. Today, Vishay General Semiconductor serves a very wide range of customers with devices that can be used as rectifiers, signal limiters, voltage regulators, switches, signal modulators, signal mixers, signal demodulators, and oscillators. Vishay General Semiconductor customers include leading manufacturers of consumer electronics, lighting, telecommunications equipment, computers, and automotive products.

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