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3N200

Ge Solid State

3N200 by Ge Solid State

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: WIRE; Minimum Power Gain (Gp): 10 dB; Minimum DS Breakdown Voltage: 20 V;

Median Price

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Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

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LWI Electronics Inc

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ComSIT Distribution GmbH

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Beltway Electronics Company

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Manotoh

Italy . 14 parts In-Stock

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ICP Electronique

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First Choice Components Inc.

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Prism Electronics

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Mil-Aero Solutions, Inc.

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Infinite Electronics LLP (Excess)

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Assy Fe

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Eliminating Global Boundries, Inc

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A-Plus Industry Inc.

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Technical Specifications

RF Small Signal Field Effect Transistors (FET) 3N200 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Ge Solid State

Specs

Case Connection:

SOURCE AND SUBSTRATE

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

.05 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

.03 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-72

JESD-30 Code:

O-MBCY-W4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DUAL GATE, DEPLETION MODE

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Minimum Power Gain (Gp):

10 dB

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

3N200 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-005-7002, 5961000057002, 5961-01-022-8575, 5961010228575, 5961-00-153-4421, 5961001534421, 5961-01-240-8188, 5961012408188, 5961-00-501-1013, 5961005011013, 5961-01-044-5061, 5961010445061, 5961-99-650-9577, 5961996509577

NIIN

000057002, 010228575, 001534421, 012408188, 005011013, 010445061, 996509577

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