Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 270 W; Qualification: Not Qualified; No. of Terminals: 3;
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Power Field Effect Transistors (FET) 2SK3921-01L attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Fuji Electric
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2SK3921-01L Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Fuji Electric has been supporting industrial and social infrastructure by extensively developing power semiconductor and power electronics solutions as core technologies. In addition, we are now working to realize a responsible and sustainable society through our energy and environment business by offering renewable energy solutions, as well as power stabilization, energy saving, and automation solutions, in order to help achieve the worldwide goal of a decarbonized society. Fuji Electric’s strength is its ability to independently develop and manufacture power semiconductors as key energy-saving devices. We utilize these devices in our power electronics equipment and offer customers comprehensive engineering services that integrate these products. By leveraging our strengths, we are contributing to the realization of the worldwide goal of a decarbonized society.
NE555D
STMicroelectronics
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
BSS138BK,215
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Additional Features: LOGIC LEVEL COMPATIBLE; Maximum Operating Temperature: 150 Cel;
RC0603JR-070RL
Yageo
Yageo's RC0603JR-070RL is a SMT fixed resistor with 0 ohm resistance, rated for temperatures from -55 to 155 °C. Its metal glaze/thick film technology and 0.1 W power dissipation make it ideal for jumper applications in various electronic devices.
1N4148
Weitron Technology
RECTIFIER DIODE; Surface Mount: NO; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; Maximum Output Current: .15 A; Terminal Finish: Tin/Lead (Sn/Pb);
SS14
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .2 A; Transistor Application: SWITCHING;
Invensys Sensor Systems
RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; Maximum Repetitive Peak Reverse Voltage: 100 V;
2N2222A
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Operating Temperature: 150 Cel;
BAV99
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
M39029/56-351
Itt Cannon
CONNECTOR ACCESSORY; MIL Conformity: YES; Terminal Type: WIRE; IEC Conformity: NO; Alternate Contact Sources: ITT CANNON; Associated Military - Specifications: MIL-C-38999;
BSS123NH6327XTSA1
Infineon Technologies
Infineon BSS123NH6327XTSA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.19A ID, and 6 ohm RDS(on). Ideal for small outline applications requiring high drain current and low on-resistance. AEC-Q101 compliant for automotive use.
MMBT3904-7-F
Diodes Incorporated
Diodes Inc. MMBT3904-7-F is a NPN BJT transistor for switching applications. Features include VCEsat of 0.3V, hFE of 30, and IC of 0.2A. With a max operating temp of 150°C, it's ideal for small outline SMT designs in automotive electronics.
LM358MX
Onsemi
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
Temic Semiconductors
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
General Semiconductor
LM107H
Raytheon Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;
0460-202-16141
TE Connectivity
TE Connectivity's 0460-202-16141 contact features a crimp terminal type, machined contact design, and rated AC voltage of 1500V. With a wire gauge range of 20-16 AWG, it is ideal for applications requiring a male round pin-socket contact style in assembly products.
LM107H/883C
Rochester Electronics
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Package Equivalence Code: CAN8,.2;
BSS138W-7-F
Multicomp Pro
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Element Material: SILICON; No. of Elements: 1;
Shanghai Lunsure Electronic Technology
RECTIFIER DIODE; Surface Mount: NO; Maximum Forward Voltage (VF): 1 V; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Config: SINGLE;
IRFP460LCPBF
Vishay Intertechnology
Vishay Intertechnology's IRFP460LCPBF is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. Ideal for SWITCHING applications, it has 80A IDM and 960mJ EAS ratings. Operating in ENHANCEMENT MODE, it features 0.27 ohm Drain-Source On Resistance and can handle up to 280W power dissipation.
SIA456DJ-T1-GE3
Vishay Intertechnology's SIA456DJ-T1-GE3 is a N-channel Power FET with 200V DS breakdown voltage and 2.6A max drain current. Ideal for switching applications, it operates in enhancement mode with 55ns turn on time and 75ns turn off time. Suitable for surface mount, this transistor has a max power dissipation of 19W in a small outline package.
FQD16N25CTM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 160 W; Avalanche Energy Rating (EAS): 432 mJ; Moisture Sensitivity Level (MSL): 1;
IRF7425TRPBF-1
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Finish: MATTE TIN; Package Style (Meter): SMALL OUTLINE;
IRLML0030TRPBF-1
Infineon's IRLML0030TRPBF-1 is a N-channel Power FET with 30V DS breakdown voltage and 21A IDM. Ideal for applications requiring high power dissipation up to 1.3W, such as in small outline packages where space is limited. Operating in enhancement mode, it offers low 0.027 ohm drain-source resistance for efficient performance.
JANTX2N6796U
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; Maximum Turn On Time (ton): 105 ns; Maximum Power Dissipation Ambient: 25 W;
BSC030P03NS3GXT
BSC030P03NS3GXT by Infineon is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 200A IDM, 345mJ EAS, and 0.0046 ohm RDS(ON). With ENHANCEMENT MODE operation and -55 to 150 °C temperature range, it offers high performance in a SMALL OUTLINE package.
STN1NK80Z
STN1NK80Z by STMicroelectronics is a N-CHANNEL Power FET with 800V DS Breakdown Voltage. It features 5A IDM, 16 ohm RDS(on), and 50mJ EAS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C.
SI4532DY
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Pulsed Drain Current (IDM): 20 A; Package Body Material: PLASTIC/EPOXY;
FDN5618P
FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.
FDD4141_F085
FDD4141_F085 by Fairchild Semiconductor is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating from -55 to 150 °C, this MOSFET has 0.0123 ohm Drain-Source On Resistance.
FQP47P06
FQP47P06 by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage and 47A Drain Current. Ideal for SWITCHING applications, it features an IDM of 188A, EAS of 820mJ, and 0.026 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 160W at 175°C.
NTD5865NLT4G
NTD5865NLT4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 137A IDM, and 0.019 ohm RDS. It is an N-CHANNEL transistor for SWITCHING applications. Operating in ENHANCEMENT MODE, it has a max power dissipation of 52W and can withstand temperatures from -55 to 150 °C.
FQD12N20LTM-F085
FQD12N20LTM-F085 by Onsemi is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Drain Current of 9A, Max Pulsed Drain Current of 36A, and Max Power Dissipation of 55W. This ENHANCEMENT MODE transistor operates b/w -55 to 150 °C and has a fast turn on/off time for efficient performance.
IPT007N06NATMA1
IPT007N06NATMA1 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, 1944A IDM, and 0.00075 ohm RDS(ON). Ideal for power applications requiring high drain current handling and low on-resistance. Suitable for use in power supplies, motor control, and automotive systems due to its high power dissipation capability.
IRFH5015TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; No. of Elements: 1; JESD-609 Code: e3;
FDMS86350ET80
The Onsemi FDMS86350ET80 is a N-CHANNEL Power FET with 80V DS Breakdown Voltage and 693A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0024 ohm RDS(on), and operates in ENHANCEMENT MODE.
IRF640NSTRLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Drain Current (ID): 18 A; Peak Reflow Temperature (C): 260;
IRFR9024NTRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 38 W; Maximum Drain Current (Abs) (ID): 11 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BSP613PH6327XTSA1
BSP613PH6327XTSA1 by Infineon Technologies is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 11.6A and 0.13 ohm Drain-Source On Resistance, suitable for ENHANCEMENT MODE operation in automotive systems (AEC-Q101).
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