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KSC1507YTU

Fairchild Semiconductor

KSC1507YTU by Fairchild Semiconductor

KSC1507YTU by Fairchild Semiconductor is a NPN BJT transistor with 300V VCEO, 15W Ptot, and 80MHz fT. Ideal for amplifier applications due to its single configuration and hFE of 120. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$0.423

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Farnell

UK . 30,850 parts In-Stock

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$0.421

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Rochester

USA . 30,428 parts In-Stock

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$0.423

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$0.351

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$0.313

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$0.351

$0.313

Verical

USA . 27,428 parts In-Stock

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$0.439

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$0.391

27,428

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$0.391

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Digiode

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732

$0.330

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Vyrian

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$0.347

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Elcom Components

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950

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Bristol Electronics

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950

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Corphita

USA . 493 parts In-Stock

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$0.312

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Continental Prestige Electronics

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$0.420

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A-Z Elektronik GmbH

Germany . 11,216 parts In-Stock

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Alle Elektronik GmbH

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Supply Digital

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Overview

Experience the superior performance and reliability of the KSC1507YTU Power Bipolar Junction Transistor by Fairchild Semiconductor. This NPN transistor offers unmatched quality for amplifier applications, providing a maximum power dissipation of 15W and a high DC current gain of 120. With a maximum operating temperature of 150°C and a collector-emitter voltage of 300V, this transistor ensures optimal functionality even in demanding conditions. Trust Fairchild Semiconductor for cutting-edge technology and unparalleled value in semiconductor components. Elevate your designs with the KSC1507YTU and unleash its full potential today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, making it suitable for various operating environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits due to their high input resistance and low output resistance.

Configuration: SINGLE

SINGLE configuration makes it easier to design and integrate into circuit boards without the need for complex setups.

Transistor Application: AMPLIFIER

Specifically designed for amplification applications, ensuring optimal performance in audio or signal amplification circuits.

Maximum Power Dissipation (Abs): 15 W

High power dissipation capability allows for handling large amounts of power without overheating, ensuring reliable operation.

Maximum Collector-Emitter Voltage: 300 V

Higher voltage rating allows the transistor to withstand higher voltages, making it suitable for a wide range of applications.

Minimum DC Current Gain (hFE): 120

High DC current gain ensures efficient amplification of signals with minimal input current, improving overall performance.

Nominal Transition Frequency (fT): 80 MHz

High transition frequency enables the transistor to operate at higher frequencies, making it suitable for high-speed applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSC1507YTU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Fairchild Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

120

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSC1507YTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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