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FQP55N10

Fairchild Semiconductor

FQP55N10 by Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 155 W; Terminal Finish: MATTE TIN; Qualification: Not Qualified;

Median Price

$1.525

Lifecycle Status

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14

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Farnell

UK . 69 parts In-Stock

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$2.560

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Element14

Singapore . 74 parts In-Stock

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$4.370

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$2.100

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$1.520

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$1.490

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$1.490

DigiKey

USA . 5,562 parts In-Stock

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Rochester

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$1.470

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$1.090

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Verical

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$1.363

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Digiode

USA . 2,076 parts In-Stock

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$1.140

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Vyrian

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Diverse Electronics

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Bristol Electronics

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Corphita

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Corohmni

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Native Components

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Northwest PG Solutions

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Continental Prestige Electronics

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Microchip USA

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Perfect Parts

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SupplyDigital Components

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Problanco Electronics

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Alle Elektronik GmbH

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UHIMA Technologies

Türkiye . 239 parts In-Stock

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Supply Digital

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Technical Specifications

Power Field Effect Transistors (FET) FQP55N10 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Avalanche Energy Rating (EAS):

1100 mJ

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

55 A

Maximum Drain Current (ID):

55 A

Maximum Drain-Source On Resistance:

.026 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

220 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FQP55N10 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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