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FQP3N80C

Fairchild Semiconductor

FQP3N80C by Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 107 W; Qualification: Not Qualified; Package Style (Meter): FLANGE MOUNT;

Median Price

$0.911

Lifecycle Status

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15

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1k+

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Farnell

UK . 1,846 parts In-Stock

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$0.566

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Rochester

USA . 40,533 parts In-Stock

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$0.878

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$0.729

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$0.650

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DigiKey

USA . 40,533 parts In-Stock

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Verical

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$0.508

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Digiode

USA . 1,997 parts In-Stock

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Vyrian

USA . 641 parts In-Stock

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UK . 147 parts In-Stock

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Martec Srl

Italy . 145 parts In-Stock

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Elcom Components

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ACDS - Activité Composants Distribution Service

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LIBRA Elektronik GmbH

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ComSIT Distribution GmbH

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Corphita

USA . 724 parts In-Stock

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$0.648

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Corohmni

South Africa . 441 parts In-Stock

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Component Stockers USA

USA . 60,896 parts In-Stock

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$0.630

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Metaverse IC Inc.

Canada . 80,000 parts In-Stock

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RC Electronics

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Kulean Microsystems

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SupplyDigital Components

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Glotronic Ltd.

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Perfect Parts

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Northwest PG Solutions

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TANS Electronics

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Problanco Electronics

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UHIMA Technologies

Türkiye . 76 parts In-Stock

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Technical Specifications

Power Field Effect Transistors (FET) FQP3N80C attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Avalanche Energy Rating (EAS):

320 mJ

Minimum DS Breakdown Voltage:

800 V

Maximum Drain Current (Abs) (ID):

3 A

Maximum Drain Current (ID):

3 A

Maximum Drain-Source On Resistance:

4.8 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

12 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FQP3N80C Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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