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FQB8N90CTM

Fairchild Semiconductor

FQB8N90CTM by Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 171 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 245;

Median Price

$2.555

Lifecycle Status

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6

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Rochester

USA . 710 parts In-Stock

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$1.450

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$1.360

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$1.230

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$1.230

Mouser Electronics

USA . 686 parts In-Stock

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$3.660

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$1.870

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$1.570

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686

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USA . 9,600 parts In-Stock

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Digiode

USA . 523 parts In-Stock

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$1.378

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Vyrian

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Corphita

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Corohmni

South Africa . 191 parts In-Stock

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Component Stockers USA

USA . 6,670 parts In-Stock

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Problanco Electronics

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Alle Elektronik GmbH

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Kulean Microsystems

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SupplyDigital Components

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TANS Electronics

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Supply Digital

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Assy Fe

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Native Components

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UHIMA Technologies

Türkiye . 738 parts In-Stock

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Northwest PG Solutions

USA . 678 parts In-Stock

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Technical Specifications

Power Field Effect Transistors (FET) FQB8N90CTM attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Avalanche Energy Rating (EAS):

850 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

900 V

Maximum Drain Current (Abs) (ID):

6.3 A

Maximum Drain Current (ID):

6.3 A

Maximum Drain-Source On Resistance:

1.9 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

25 A

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FQB8N90CTM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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