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FQB55N06TM

Fairchild Semiconductor

FQB55N06TM by Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 133 W; Transistor Application: SWITCHING; Package Style (Meter): SMALL OUTLINE;

Median Price

$1.120

Lifecycle Status

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5

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1k+

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Farnell

UK . 696 parts In-Stock

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$0.775

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Rochester

USA . 396 parts In-Stock

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$1.120

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$0.932

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$0.831

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$0.831

Verical

USA . 396 parts In-Stock

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$1.165

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$1.038

396

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$1.038

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Vyrian

USA . 668 parts In-Stock

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$0.775

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Digiode

USA . 793 parts In-Stock

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$0.875

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$0.702

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$0.639

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$0.576

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Corphita

USA . 698 parts In-Stock

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$0.829

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Andel Nordic

Denmark . 256 parts In-Stock

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$2.463

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$2.365

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$2.365

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Microchip USA

USA . 360 parts In-Stock

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$5.720

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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Supply Digital

USA . 1,948 parts In-Stock

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Technical Specifications

Power Field Effect Transistors (FET) FQB55N06TM attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Avalanche Energy Rating (EAS):

545 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

55 A

Maximum Drain Current (ID):

55 A

Maximum Drain-Source On Resistance:

.02 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

220 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FQB55N06TM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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