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FDFS2P753AZ

Fairchild Semiconductor

FDFS2P753AZ by Fairchild Semiconductor

FDFS2P753AZ by Fairchild Semiconductor is a P-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 16A IDM, 6mJ EAS, and 0.115 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 150°C. Suitable for surface mount designs with GULL WING terminals in an 8-terminal package style.

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$0.621

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Overview

Unlock the power of innovation with the Fairchild Semiconductor FDFS2P753AZ Power Field Effect Transistor. Manufactured by a trusted industry leader, this P-Channel transistor offers exceptional quality and reliability for a wide range of switching applications. With a built-in diode and high performance enhancements, this transistor delivers superior efficiency and performance. Experience the value and benefits of this advanced technology, designed to meet your power management needs with precision and reliability. Elevate your projects with the FDFS2P753AZ and unleash the full potential of your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the FET, ensuring a longer lifespan.

Polarity or Channel Type: P-CHANNEL

P-channel FETs are known for their lower resistance and higher efficiency compared to N-channel FETs, making them a good choice for power switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode offers reverse polarity protection and simplifies circuit design, making the FET easier to use in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET can handle high current and voltage levels efficiently.

Surface Mount: YES

Surface mount technology allows for easy and compact integration onto PCBs, saving space and simplifying assembly processes.

Minimum DS Breakdown Voltage: 30 V

With a high breakdown voltage, this FET can handle high voltage levels without breakdown, ensuring reliable performance.

Maximum Drain Current (ID): 3 A

Capable of handling up to 3A of current, this FET is suitable for medium power applications.

Maximum Drain-Source On Resistance: 0.115 ohm

Low on-resistance minimizes power loss and heat generation, making the FET energy efficient and suitable for high-frequency switching applications.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this FET can withstand elevated temperatures without compromising performance, ensuring reliability in various environments.

Technical Specifications

Power Field Effect Transistors (FET) FDFS2P753AZ attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Avalanche Energy Rating (EAS):

6 mJ

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

3 A

Maximum Drain Current (ID):

3 A

Maximum Drain-Source On Resistance:

.115 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

16 A

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDFS2P753AZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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