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FDB5690

Fairchild Semiconductor

FDB5690 by Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 58 W; Maximum Drain Current (Abs) (ID): 32 A; Maximum Drain-Source On Resistance: .027 ohm;

Median Price

$1.615

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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Farnell

UK . 21,703 parts In-Stock

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$1.400

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$1.400

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DigiKey

USA . 18,503 parts In-Stock

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$1.740

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$1.740

18,503

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$1.740

Rochester

USA . 18,367 parts In-Stock

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$1.490

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$1.330

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$1.260

18,367

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$1.490

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$1.260

Verical

USA . 4,949 parts In-Stock

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$1.962

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4,949

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Vyrian

USA . 812 parts In-Stock

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$1.400

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Digiode

USA . 230 parts In-Stock

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$1.586

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ACDS - Activité Composants Distribution Service

France . 800 parts In-Stock

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800

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Cyclops Electronics Ltd

UK . 800 parts In-Stock

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800

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Prism Electronics

USA . 11 parts In-Stock

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Corphita

USA . 152 parts In-Stock

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$1.503

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Advanced Electronics

New Zealand . 200 parts In-Stock

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$1.532

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$1.394

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$1.256

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200

$1.532

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Microchip USA

USA . 225 parts In-Stock

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$10.400

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A-Z Elektronik GmbH

Germany . 5,250 parts In-Stock

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Supply Digital

USA . 1,673 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 800 parts In-Stock

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800

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Technical Specifications

Power Field Effect Transistors (FET) FDB5690 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Avalanche Energy Rating (EAS):

80 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

32 A

Maximum Drain Current (ID):

32 A

Maximum Drain-Source On Resistance:

.027 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

100 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDB5690 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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