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FDB16AN08A0

Fairchild Semiconductor

FDB16AN08A0 by Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 135 W; JEDEC-95 Code: TO-263AB; Terminal Form: GULL WING;

Median Price

$1.663

Lifecycle Status

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Mouser Electronics

USA . 2,385 parts In-Stock

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$3.620

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$1.660

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$1.350

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$3.620

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DigiKey

USA . 2,234 parts In-Stock

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$3.620

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$1.652

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$1.279

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$1.181

2,234

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$1.181

Rochester

USA . 685 parts In-Stock

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$1.600

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$1.180

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Verical

USA . 685 parts In-Stock

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$1.475

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Farnell

UK . 72 parts In-Stock

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Vyrian

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Digiode

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Flip Electronics

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Bristol Electronics

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USA . 467 parts In-Stock

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$0.336

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Northwest PG Solutions

USA . 2,066 parts In-Stock

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$0.385

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$0.339

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Corohmni

South Africa . 439 parts In-Stock

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Corphita

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Microchip USA

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iodParts Technologies Inc.

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Continental Prestige Electronics

USA . 3,786 parts In-Stock

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SupplyDigital Components

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Perfect Parts

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Supply Digital

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Kepictronics

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UHIMA Technologies

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Technical Specifications

Power Field Effect Transistors (FET) FDB16AN08A0 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Avalanche Energy Rating (EAS):

117 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

75 V

Maximum Drain Current (Abs) (ID):

9 A

Maximum Drain Current (ID):

9 A

Maximum Drain-Source On Resistance:

.016 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDB16AN08A0 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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