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ZXMS6001N3TA

Diodes Incorporated

ZXMS6001N3TA by Diodes Incorporated

ZXMS6001N3TA by Diodes Inc. is a N-CHANNEL FET with 60V DS breakdown voltage and 1.1A max drain current. Ideal for switching applications, it operates in enhancement mode with 550mJ avalanche energy rating. Package style is small outline, surface mountable with matte tin terminal finish.

Median Price

$0.708

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 26 parts In-Stock

1+ parts

$1.570

100+ parts

$0.665

1k+ parts

$0.427

10k+ parts

$0.377

26

$1.570

$0.665

$0.427

$0.377

DigiKey

USA . 429 parts In-Stock

1+ parts

$1.680

100+ parts

$0.711

1k+ parts

$0.558

10k+ parts

-

429

$1.680

$0.711

$0.558

-

Verical

USA . 280,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.394

10k+ parts

-

280,000

-

-

$0.394

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Avnet

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,000

-

-

-

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Farnell

UK . 873 parts In-Stock

1+ parts

-

100+ parts

$0.684

1k+ parts

$0.526

10k+ parts

$0.474

873

-

$0.684

$0.526

$0.474

Element14

Singapore . 873 parts In-Stock

1+ parts

-

100+ parts

$0.708

1k+ parts

$0.560

10k+ parts

$0.552

873

-

$0.708

$0.560

$0.552

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.496

100+ parts

-

1k+ parts

-

10k+ parts

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10

$0.496

-

-

-

Chip Stock

USA . 51,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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51,000

-

-

-

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Vyrian

USA . 40,850 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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40,850

-

-

-

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 4,564 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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4,564

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NAC Semi

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

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1,000

-

-

-

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ComSIT Distribution GmbH

Germany . 254 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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254

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Argo Parts USA

USA . 2,553 parts In-Stock

1+ parts

$0.496

100+ parts

-

1k+ parts

-

10k+ parts

$0.481

2,553

$0.496

-

-

$0.481

Aztec Data Supply Inc.

USA . 3,760 parts In-Stock

1+ parts

$0.627

100+ parts

-

1k+ parts

-

10k+ parts

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3,760

$0.627

-

-

-

Continental Prestige Electronics

USA . 920 parts In-Stock

1+ parts

$0.989

100+ parts

$0.599

1k+ parts

$0.453

10k+ parts

-

920

$0.989

$0.599

$0.453

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Corohmni

South Africa . 1,165 parts In-Stock

1+ parts

$1.259

100+ parts

-

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10k+ parts

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1,165

$1.259

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Microchip USA

USA . 2,562 parts In-Stock

1+ parts

$3.071

100+ parts

-

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10k+ parts

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2,562

$3.071

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-

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Kepictronics

USA . 306,000 parts In-Stock

1+ parts

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100+ parts

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10k+ parts

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306,000

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

1+ parts

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100+ parts

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8,000

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-

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Robosynatics

Brazil . 5,161 parts In-Stock

1+ parts

-

100+ parts

$1.860

1k+ parts

$1.822

10k+ parts

$1.822

5,161

-

$1.860

$1.822

$1.822

Lucentia Tech

USA . 5,161 parts In-Stock

1+ parts

-

100+ parts

$1.860

1k+ parts

$1.822

10k+ parts

$1.822

5,161

-

$1.860

$1.822

$1.822

Perfect Parts

USA . 5,053 parts In-Stock

1+ parts

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5,053

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-

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Lixinc

USA . 4,602 parts In-Stock

1+ parts

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4,602

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

$0.486

1k+ parts

$0.471

10k+ parts

$0.461

1,000

-

$0.486

$0.471

$0.461

Eastek

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.571

10k+ parts

-

1,000

-

-

$0.571

-

Overview

Enhance the performance of your electronic devices with the ZXMS6001N3TA by Diodes Incorporated. Manufactured with top-quality materials and cutting-edge technology, this power field effect transistor offers unmatched reliability and efficiency in switching applications. With a high breakdown voltage and low on-resistance, this N-channel transistor ensures optimal performance while maximizing power dissipation. Whether you're designing consumer electronics or industrial equipment, the ZXMS6001N3TA provides exceptional value and benefits to meet your specific needs. Upgrade your products today and experience the advantages of using this advanced semiconductor component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the FET, ensuring long-term reliability.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have better performance and efficiency compared to P-channel FETs, making it a suitable choice for many applications.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and makes integration easier.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing fast and efficient switching performance.

Minimum DS Breakdown Voltage: 60 V

With a high breakdown voltage, it is suitable for applications requiring higher voltage handling capability.

Maximum Drain Current (ID): 1.1 A

Capable of handling high drain currents, making it suitable for various power applications.

Maximum Power Dissipation (Abs): 1.5 W

The higher power dissipation rating allows for reliable operation under various load conditions.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without compromising performance.

Maximum Drain-Source On Resistance: 0.675 ohm

Low on-resistance helps in reducing power losses and improving efficiency in switching applications.

Technical Specifications

Power Field Effect Transistors (FET) ZXMS6001N3TA attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Avalanche Energy Rating (EAS):

550 mJ

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

1.1 A

Maximum Drain Current (ID):

1.1 A

Maximum Drain-Source On Resistance:

.675 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZXMS6001N3TA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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