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ZXMP7A17GTA

Diodes Incorporated

ZXMP7A17GTA by Diodes Incorporated

ZXMP7A17GTA by Diodes Inc. is a P-CHANNEL FET with 70V DS Breakdown Voltage, 3.7A Drain Current, and 0.16 ohm On Resistance. Ideal for SWITCHING applications due to its 9.6A Pulsed Drain Current capability in ENHANCEMENT MODE operation. Package: PLASTIC/EPOXY, GULL WING terminals, and SMALL OUTLINE style make it suitable for surface mount designs at up to 150°C operating temperature.

Median Price

$0.528

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 40 parts In-Stock

1+ parts

$0.450

100+ parts

$0.410

1k+ parts

$0.369

10k+ parts

-

40

$0.450

$0.410

$0.369

-

Mouser Electronics

USA . 1,947 parts In-Stock

1+ parts

$1.190

100+ parts

$0.502

1k+ parts

$0.353

10k+ parts

$0.293

1,947

$1.190

$0.502

$0.353

$0.293

DigiKey

USA . 71 parts In-Stock

1+ parts

$1.190

100+ parts

$0.491

1k+ parts

$0.336

10k+ parts

$0.256

71

$1.190

$0.491

$0.336

$0.256

Verical

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.287

10k+ parts

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10,000

-

-

$0.287

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Arrow

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.271

10k+ parts

$0.256

4,000

-

-

$0.271

$0.256

Future Electronics

Canada . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.605

10k+ parts

$0.585

2,000

-

-

$0.605

$0.585

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.344

100+ parts

-

1k+ parts

-

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50

$0.344

-

-

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IBS Electronics

USA . 196,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.849

10k+ parts

$0.288

196,000

-

-

$0.849

$0.288

NAC Semi

USA . 56,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.570

10k+ parts

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56,000

-

-

$0.570

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Vyrian

USA . 52,983 parts In-Stock

1+ parts

-

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52,983

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Chip Stock

USA . 21,290 parts In-Stock

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21,290

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Rutronik

Germany . 6,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.404

10k+ parts

$0.311

6,000

-

-

$0.404

$0.311

Inventory MP

USA . 1,860 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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1,860

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Bristol Electronics

USA . 1,860 parts In-Stock

1+ parts

-

100+ parts

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1,860

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ComSIT Distribution GmbH

Germany . 990 parts In-Stock

1+ parts

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990

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ComSIT USA

USA . 990 parts In-Stock

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990

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QIE Inc.

USA . 772 parts In-Stock

1+ parts

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772

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 53,334 parts In-Stock

1+ parts

$0.208

100+ parts

-

1k+ parts

-

10k+ parts

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53,334

$0.208

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Semicontronic

India . 52,954 parts In-Stock

1+ parts

$0.208

100+ parts

$0.203

1k+ parts

$0.202

10k+ parts

-

52,954

$0.208

$0.203

$0.202

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.344

100+ parts

$0.337

1k+ parts

-

10k+ parts

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2,000

$0.344

$0.337

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Argo Parts USA

USA . 1,260 parts In-Stock

1+ parts

$0.344

100+ parts

-

1k+ parts

-

10k+ parts

$0.334

1,260

$0.344

-

-

$0.334

Continental Prestige Electronics

USA . 1,217 parts In-Stock

1+ parts

$0.344

100+ parts

-

1k+ parts

-

10k+ parts

$0.337

1,217

$0.344

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-

$0.337

Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$0.450

100+ parts

$0.410

1k+ parts

$0.369

10k+ parts

-

40

$0.450

$0.410

$0.369

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Aztec Data Supply Inc.

USA . 1,344 parts In-Stock

1+ parts

$1.110

100+ parts

-

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1,344

$1.110

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Corohmni

South Africa . 478 parts In-Stock

1+ parts

$1.848

100+ parts

-

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478

$1.848

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Modulus Dynamics

Lithuania . 22,675 parts In-Stock

1+ parts

$1.958

100+ parts

$1.958

1k+ parts

$1.958

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22,675

$1.958

$1.958

$1.958

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Perfect Parts

USA . 94,118 parts In-Stock

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94,118

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Eastek

USA . 46,000 parts In-Stock

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$0.402

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46,000

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$0.402

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Kepictronics

USA . 27,860 parts In-Stock

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27,860

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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8,000

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GreenTree Electronics

Israel . 5,000 parts In-Stock

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5,000

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Robosynatics

Brazil . 2,850 parts In-Stock

1+ parts

-

100+ parts

$1.846

1k+ parts

$1.809

10k+ parts

$1.809

2,850

-

$1.846

$1.809

$1.809

Lucentia Tech

USA . 2,850 parts In-Stock

1+ parts

-

100+ parts

$1.846

1k+ parts

$1.809

10k+ parts

$1.809

2,850

-

$1.846

$1.809

$1.809

Lixinc

USA . 1,498 parts In-Stock

1+ parts

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1,498

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Overview

Experience the superior performance and reliability of the ZXMP7A17GTA by Diodes Incorporated, a leading manufacturer known for its high-quality power field effect transistors. Ideal for switching applications, this P-channel transistor offers enhanced efficiency and durability with a single configuration and built-in diode. With a maximum pulsed drain current of 9.6A and a minimum DS breakdown voltage of 70V, this transistor delivers exceptional power handling capabilities in a compact, surface-mount package. Trust Diodes Incorporated to provide innovative solutions for your electronic needs, ensuring optimal performance and longevity. Elevate your designs with the ZXMP7A17GTA and unlock the potential for unparalleled results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: P-CHANNEL

Allows for efficient current flow and operation in switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and provides added functionality with the built-in diode.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in these scenarios.

Surface Mount: YES

Enables easy and efficient mounting on PCBs, saving space and simplifying assembly processes.

Minimum DS Breakdown Voltage: 70 V

Can handle high voltage requirements, making it suitable for a variety of applications.

Package Shape: RECTANGULAR

Facilitates easy placement and orientation during assembly.

Terminal Form: GULL WING

Provides a secure connection and facilitates soldering during installation.

Operating Mode: ENHANCEMENT MODE

Allows for precise control over the transistor's operation, enhancing overall performance.

Maximum Pulsed Drain Current (IDM): 9.6 A

Capable of handling high current pulses, making it reliable for demanding applications.

Maximum Drain Current (Abs) (ID): 3.7 A

Sufficient drain current capacity for typical operating conditions.

No. of Terminals: 4

Provides necessary connections for the transistor's operation and integration into circuits.

Maximum Power Dissipation (Abs): 3.9 W

Can dissipate heat efficiently, ensuring stable operation under load.

Package Style (Meter): SMALL OUTLINE

Compact design saves space on the PCB and allows for dense circuit layouts.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizes advanced technology for improved performance and reliability.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance.

Transistor Element Material: SILICON

Silicon-based construction offers high efficiency and performance for the transistor.

Terminal Finish: MATTE TIN

Provides a durable and reliable finish for the terminals, ensuring long-term performance.

Maximum Drain-Source On Resistance: 0.16 ohm

Low on-resistance minimizes power loss and heat generation during operation.

Terminal Position: DUAL

Dual terminal configuration provides flexibility in circuit design and connection options.

Case Connection: DRAIN

Easy to connect and integrate into circuits for efficient operation.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand reflow soldering process without damage, ensuring reliable assembly.

Peak Reflow Temperature °C: 260

Can withstand high-temperature soldering processes without compromising functionality.

Technical Specifications

Power Field Effect Transistors (FET) ZXMP7A17GTA attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

LOW THRESHOLD; FAST SWITCHING

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

70 V

Maximum Drain Current (Abs) (ID):

3.7 A

Maximum Drain Current (ID):

3.7 A

Maximum Drain-Source On Resistance:

.16 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

9.6 A

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZXMP7A17GTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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