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ZXMN10B08E6TA

Diodes Incorporated

ZXMN10B08E6TA by Diodes Incorporated

ZXMN10B08E6TA by Diodes Inc. is a N-CHANNEL FET with 100V DS breakdown voltage, 9A IDM, and 0.23 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features GULL WING terminals, small outline package style, and operates up to 150°C.

Median Price

$0.684

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1 parts In-Stock

1+ parts

$1.580

100+ parts

$0.655

1k+ parts

$0.467

10k+ parts

$0.412

1

$1.580

$0.655

$0.467

$0.412

Adafruit Industries

USA . 1,000 parts In-Stock

1+ parts

$1.824

100+ parts

$1.660

1k+ parts

$1.496

10k+ parts

-

1,000

$1.824

$1.660

$1.496

-

Verical

USA . 132,000 parts In-Stock

1+ parts

-

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$0.251

132,000

-

-

-

$0.251

Newark

USA . 3,004 parts In-Stock

1+ parts

-

100+ parts

$0.816

1k+ parts

$0.581

10k+ parts

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3,004

-

$0.816

$0.581

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Arrow

USA . 3,000 parts In-Stock

1+ parts

-

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10k+ parts

$0.240

3,000

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$0.240

Farnell

UK . 4 parts In-Stock

1+ parts

-

100+ parts

$0.400

1k+ parts

$0.319

10k+ parts

$0.289

4

-

$0.400

$0.319

$0.289

Element14

Singapore . 4 parts In-Stock

1+ parts

-

100+ parts

$0.684

1k+ parts

$0.493

10k+ parts

$0.484

4

-

$0.684

$0.493

$0.484

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 600 parts In-Stock

1+ parts

$0.337

100+ parts

-

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600

$0.337

-

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Component Electronics Inc.

Canada . 1,691 parts In-Stock

1+ parts

$2.310

100+ parts

$1.730

1k+ parts

$1.500

10k+ parts

-

1,691

$2.310

$1.730

$1.500

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Chip Stock

USA . 41,203 parts In-Stock

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Vyrian

USA . 37,115 parts In-Stock

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NAC Semi

USA . 12,000 parts In-Stock

1+ parts

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$0.425

12,000

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-

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$0.425

LIBRA Elektronik GmbH

Germany . 2,586 parts In-Stock

1+ parts

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2,586

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Semi Source

USA . 757 parts In-Stock

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757

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Rebound Electronics

UK . 200 parts In-Stock

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200

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Sensible Micro Corp

USA . 84 parts In-Stock

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84

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Semtec, LLC

USA . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 19,075 parts In-Stock

1+ parts

$0.204

100+ parts

-

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19,075

$0.204

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-

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Argo Parts USA

USA . 167 parts In-Stock

1+ parts

$0.337

100+ parts

-

1k+ parts

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10k+ parts

$0.327

167

$0.337

-

-

$0.327

Corohmni

South Africa . 102 parts In-Stock

1+ parts

$0.603

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102

$0.603

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Continental Prestige Electronics

USA . 6,769 parts In-Stock

1+ parts

$0.744

100+ parts

$0.442

1k+ parts

$0.279

10k+ parts

$0.245

6,769

$0.744

$0.442

$0.279

$0.245

Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$1.824

100+ parts

$1.660

1k+ parts

$1.496

10k+ parts

-

1,000

$1.824

$1.660

$1.496

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Perfect Parts

USA . 390,282 parts In-Stock

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Eastek

USA . 45,000 parts In-Stock

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Kepictronics

USA . 33,776 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Glotronic Ltd.

UK . 2,400 parts In-Stock

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2,400

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

$0.330

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$0.320

10k+ parts

$0.313

2,000

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$0.330

$0.320

$0.313

Lixinc

USA . 1,437 parts In-Stock

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1,437

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Overview

Enhance your electronic projects with the ZXMN10B08E6TA by Diodes Incorporated, a top-quality N-CHANNEL power FET perfect for switching applications. With a solid reputation for manufacturing excellence, Diodes Incorporated ensures reliable performance and durability in every product. This small outline transistor offers a low on-resistance and high current capability, making it ideal for a wide range of applications. Trust Diodes Incorporated to deliver value, benefits, and unmatched advantages with the ZXMN10B08E6TA for all your power management needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring reliability and durability.

Polarity or Channel Type: N-CHANNEL

N-channel FETs generally offer better conductivity and performance than P-channel FETs, making this product a good choice for high-efficiency applications.

Minimum DS Breakdown Voltage: 100 V

Can handle high voltages safely, making it suitable for a wide range of applications.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs are easier to use in most applications and offer better control over the switching behavior.

Maximum Drain-Source On Resistance: 0.23 ohm

Low on-resistance results in minimal power loss and improved efficiency in switching applications.

Maximum Pulsed Drain Current (IDM): 9 A

Capable of handling high peak currents without failure, making it suitable for demanding applications.

Surface Mount: YES

Enables easy and efficient PCB assembly, saving time and labor costs.

Technical Specifications

Power Field Effect Transistors (FET) ZXMN10B08E6TA attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

LOW THRESHOLD

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

1.6 A

Maximum Drain-Source On Resistance:

.23 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

9 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZXMN10B08E6TA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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