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ZXGD3102T8TA

Diodes Incorporated

ZXGD3102T8TA by Diodes Incorporated

BUFFER OR INVERTER BASED MOSFET DRIVER; Temperature Grade: AUTOMOTIVE; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR;

Median Price

$1.398

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,000 parts In-Stock

1+ parts

$1.398

100+ parts

$1.246

1k+ parts

$1.220

10k+ parts

-

1,000

$1.398

$1.246

$1.220

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,300

-

-

-

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Martec Srl

Italy . 987 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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987

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-

-

-

ACDS - Activité Composants Distribution Service

France . 473 parts In-Stock

1+ parts

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1k+ parts

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473

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Bristol Electronics

USA . 473 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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473

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-

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Dan-Mar Components

USA . 473 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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473

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 765 parts In-Stock

1+ parts

$18.250

100+ parts

-

1k+ parts

-

10k+ parts

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765

$18.250

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-

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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5,000

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-

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Microchip USA

USA . 299 parts In-Stock

1+ parts

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100+ parts

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299

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GreenTree Electronics

Israel . 50 parts In-Stock

1+ parts

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50

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Perfect Parts

USA . 17 parts In-Stock

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17

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Technical Specifications

MOSFET Gate Drivers ZXGD3102T8TA attributes and parameters. Explore more MOSFET Gate Drivers devices from Diodes Incorporated

Specs

High Side Driver:

YES

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

6.5 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOP8,.28,60

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

10

Qualification:

Not Qualified

Maximum Seated Height:

1.53 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

15 V

Minimum Supply Voltage:

5 V

Nominal Supply Voltage:

10 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

1.7 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

1.94 us

Turn-on Time:

.032 us

Width:

3.5 mm

Trade Compliance

ZXGD3102T8TA Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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