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TB2600M-13-F

Diodes Incorporated

TB2600M-13-F by Diodes Incorporated

Diodes Incorporated's TB2600M-13-F is a silicon surge protector with 30A peak current, 220V off-state voltage, and 150°C max operating temp. It is a thyristor surge protector for surface mount applications in electronics to safeguard against voltage spikes.

Median Price

$1.170

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,991 parts In-Stock

1+ parts

$1.050

100+ parts

$0.669

1k+ parts

$0.462

10k+ parts

$0.393

2,991

$1.050

$0.669

$0.462

$0.393

DigiKey

USA . 7,650 parts In-Stock

1+ parts

$1.290

100+ parts

$0.608

1k+ parts

$0.451

10k+ parts

$0.394

7,650

$1.290

$0.608

$0.451

$0.394

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ACDS - Activité Composants Distribution Service

France . 2,884 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,884

-

-

-

-

Bristol Electronics

USA . 2,884 parts In-Stock

1+ parts

-

100+ parts

$0.390

1k+ parts

$0.291

10k+ parts

$0.270

2,884

-

$0.390

$0.291

$0.270

Dan-Mar Components

USA . 2,884 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,884

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 298 parts In-Stock

1+ parts

$5.125

100+ parts

-

1k+ parts

$4.920

10k+ parts

$4.920

298

$5.125

-

$4.920

$4.920

Kepictronics

USA . 120,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

120,000

-

-

-

-

Perfect Parts

USA . 9,408 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,408

-

-

-

-

Lixinc

USA . 3,010 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,010

-

-

-

-

Authorized Procurement Solutions

USA . 2,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,800

-

-

-

-

Overview

Experience superior protection and reliability with the Diodes Incorporated TB2600M-13-F Silicon Surge Protector. As a leading manufacturer in the industry, Diodes Incorporated ensures top-notch quality and performance in every product. This surge protector is perfect for a wide range of applications, offering unmatched value and benefits to customers. Trust in Diodes Incorporated to provide you with peace of mind and protection against electrical surges, ensuring your devices remain safe and operational.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection against external elements, ensuring the longevity of the surge protector.

Configuration: SINGLE

Simplified design for easy installation and operation.

Non Repetitive Peak On-state Current: 30 A

Ability to handle high currents during transient events, ensuring reliable protection for connected devices.

Surface Mount: YES

Suitable for modern electronic applications with surface mount technology, making it easy to integrate into circuit boards.

Package Shape: RECTANGULAR

Space-efficient design that can easily fit into tight spaces within electronic equipment.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, ensuring stable performance even in harsh environmental conditions.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

Reliable protection mechanism that triggers in response to voltage spikes, diverting excess energy away from connected devices.

Technical Specifications

Silicon Surge Protectors TB2600M-13-F attributes and parameters. Explore more Silicon Surge Protectors devices from Diodes Incorporated

Specs

Maximum Breakdown Voltage:

300 V

Configuration:

Maximum DC Off-state Voltage:

220 V

Maximum Holding Current:

800 mA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Non Repetitive Peak On-state Current:

30 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Silicon Surge Protectors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

Trade Compliance

TB2600M-13-F Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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