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SDT4U40EP3-7B

Diodes Incorporated

SDT4U40EP3-7B by Diodes Incorporated

SDT4U40EP3-7B by Diodes Inc. is a single Schottky rectifier diode with 40V reverse test voltage and 150uA max reverse current. It operates b/w -55 to 150°C, has a max forward voltage of 0.55V, and can handle up to 4A output current. Ideal for efficiency applications in various electronic circuits.

Median Price

$0.500

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 16,564 parts In-Stock

1+ parts

$0.500

100+ parts

$0.222

1k+ parts

$0.141

10k+ parts

$0.120

16,564

$0.500

$0.222

$0.141

$0.120

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 61 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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61

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 6 parts In-Stock

1+ parts

$0.125

100+ parts

-

1k+ parts

-

10k+ parts

-

6

$0.125

-

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Ampacity Inc.

Singapore . 16,618 parts In-Stock

1+ parts

$0.416

100+ parts

-

1k+ parts

-

10k+ parts

-

16,618

$0.416

-

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QUARKTWIN TECHNOLOGY LTD

USA . 14,522 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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14,522

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Argo Parts USA

USA . 5,243 parts In-Stock

1+ parts

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5,243

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Continental Prestige Electronics

USA . 1,365 parts In-Stock

1+ parts

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1,365

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Aranea Global

USA . 100 parts In-Stock

1+ parts

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100

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Overview

Discover the Diodes Incorporated SDT4U40EP3-7B, a top-tier rectifier diode that guarantees superior quality and reliability. Perfect for applications requiring high efficiency, this Schottky diode offers customers unparalleled value with its maximum output current of 4A and low forward voltage of 0.55V. The manufacturer's commitment to excellence shines through in every aspect of this product, from its nickel gold terminal finish to its MIL-STD-202 reference standard. Experience the advantages of cutting-edge technology with the SDT4U40EP3-7B and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the diode, making it suitable for various applications.

Maximum Reverse Current: 150 uA

Low reverse current ensures efficiency and reliability in the circuit.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, suitable for demanding environments.

Technology: SCHOTTKY

Schottky diodes offer low forward voltage drop and fast switching, enhancing efficiency.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification, ensuring smooth conversion of AC to DC.

Technical Specifications

Diodes & Rectifiers SDT4U40EP3-7B attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

EFFICIENCY

Case Connection:

ANODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.55 V

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e4

Maximum Non Repetitive Peak Forward Current:

28 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Reference Standard:

MIL-STD-202

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

150 uA

Reverse Test Voltage:

40 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

NICKEL GOLD

Terminal Form:

Terminal Position:

Trade Compliance

SDT4U40EP3-7B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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