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SDT40B100ST

Diodes Incorporated

SDT40B100ST by Diodes Incorporated

SDT40B100ST by Diodes Inc. is a Schottky rectifier diode with a max output current of 40A and reverse test voltage of 100V. It has fast soft recovery for high-speed applications, operating b/w -55 to 150°C. The diode features a single terminal position in a small outline package suitable for various electronic circuits.

Median Price

$0.483

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 1,000 parts In-Stock

1+ parts

$0.483

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

$0.483

-

-

-

Vyrian

USA . 17,753 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

17,753

-

-

-

-

Chip Stock

USA . 1,125 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,125

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 1,531 parts In-Stock

1+ parts

$0.010

100+ parts

$0.010

1k+ parts

$0.010

10k+ parts

-

1,531

$0.010

$0.010

$0.010

-

Ampacity Inc.

Singapore . 468 parts In-Stock

1+ parts

$0.010

100+ parts

-

1k+ parts

-

10k+ parts

-

468

$0.010

-

-

-

Continental Prestige Electronics

USA . 4,521 parts In-Stock

1+ parts

$0.483

100+ parts

-

1k+ parts

-

10k+ parts

$0.474

4,521

$0.483

-

-

$0.474

Argo Parts USA

USA . 1,575 parts In-Stock

1+ parts

$0.483

100+ parts

-

1k+ parts

-

10k+ parts

$0.469

1,575

$0.483

-

-

$0.469

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.483

100+ parts

$0.474

1k+ parts

-

10k+ parts

-

1,000

$0.483

$0.474

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-

Microchip USA

USA . 3,533 parts In-Stock

1+ parts

$4.637

100+ parts

-

1k+ parts

-

10k+ parts

-

3,533

$4.637

-

-

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AZTECH Wire

Italy . 692 parts In-Stock

1+ parts

$9.709

100+ parts

-

1k+ parts

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10k+ parts

-

692

$9.709

-

-

-

Overview

Unleash the power of innovation with the SDT40B100ST by Diodes Incorporated. This high-quality rectifier diode offers fast soft recovery and a maximum output current of 40A, making it ideal for a wide range of applications. With a peak repetitive reverse voltage of 100V and a peak non-repetitive forward current of 250A, this Schottky diode delivers exceptional performance and reliability. Trust in Diodes Incorporated's expertise and experience in the industry to provide you with a product that exceeds expectations. Upgrade your projects today with the SDT40B100ST and experience the difference in quality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, ensuring a longer lifespan.

Maximum Reverse Current: 120 uA

Low reverse current indicates high efficiency and minimal power loss in the circuit.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliability in various conditions and applications.

Diode Type: RECTIFIER DIODE

Rectifier diodes are commonly used for converting alternating current (AC) to direct current (DC), making them versatile and essential components in electronic circuits.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching capabilities compared to standard diodes, making them suitable for high frequency and fast recovery applications.

Technical Specifications

Diodes & Rectifiers SDT40B100ST attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST SOFT RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.68 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

250 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

40 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

120 uA

Reverse Test Voltage:

100 V

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

SDT40B100ST Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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