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SDT40100CT

Diodes Incorporated

SDT40100CT by Diodes Incorporated

SDT40100CT by Diodes Inc. is a Schottky rectifier diode with common cathode, 2 elements, and max reverse current of 100uA. It operates b/w -55 to 150°C, has a peak forward voltage of 0.79V, and can handle up to 20A output current. Ideal for fast soft recovery applications.

Median Price

$0.990

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 121 parts In-Stock

1+ parts

$0.990

100+ parts

$0.477

1k+ parts

$0.322

10k+ parts

$0.307

121

$0.990

$0.477

$0.322

$0.307

DigiKey

USA . 50 parts In-Stock

1+ parts

$1.000

100+ parts

$0.385

1k+ parts

$0.338

10k+ parts

$0.308

50

$1.000

$0.385

$0.338

$0.308

Verical

USA . 5,850 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.308

10k+ parts

-

5,850

-

-

$0.308

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TME

Poland . 209 parts In-Stock

1+ parts

$0.998

100+ parts

$0.390

1k+ parts

$0.381

10k+ parts

-

209

$0.998

$0.390

$0.381

-

Vyrian

USA . 4,665 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,665

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 2,043 parts In-Stock

1+ parts

$0.910

100+ parts

-

1k+ parts

$0.300

10k+ parts

-

2,043

$0.910

-

$0.300

-

Microchip USA

USA . 4,951 parts In-Stock

1+ parts

$5.980

100+ parts

-

1k+ parts

-

10k+ parts

-

4,951

$5.980

-

-

-

Infinite Electronics LLP (Excess)

. 1,141 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,141

-

-

-

-

Eastek

USA . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

50

-

-

-

-

Overview

Upgrade your electronics with the SDT40100CT by Diodes Incorporated - a high-quality diode & rectifier that offers fast soft recovery for optimal performance. With a common cathode configuration and two elements, this product is designed for maximum efficiency in a variety of applications. From its durable plastic/epoxy body to its matte tin terminal finish, every detail is crafted for reliability and longevity. Experience the benefits of a peak repetitive peak reverse voltage of 100V, maximum output current of 20A, and Schottky technology for superior functionality. Trust in Diodes Incorporated to deliver the value and advantages you need for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diodes, ensuring a long lifespan.

Maximum Reverse Current: 100 uA

Low reverse current ensures efficient operation and minimal power loss.

Reverse Test Voltage: 100 V

High reverse test voltage adds to the reliability of the diodes in preventing reverse current flow.

Application: FAST SOFT RECOVERY

Fast soft recovery capabilities allow for quick response times and smooth transitions in the rectification process.

Technology: SCHOTTKY

Schottky technology provides low forward voltage drop and fast switching speeds, making these diodes suitable for high-frequency applications.

Technical Specifications

Diodes & Rectifiers SDT40100CT attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

FAST SOFT RECOVERY

Minimum Breakdown Voltage:

100 V

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.79 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

200 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

100 uA

Reverse Test Voltage:

100 V

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

SDT40100CT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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