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SDT3045VCT

Diodes Incorporated

SDT3045VCT by Diodes Incorporated

SDT3045VCT by Diodes Inc. is a Schottky rectifier diode with 45V reverse test voltage, 15A max output current, and 0.5V max forward voltage. Commonly used in fast soft recovery applications due to its high operating temp range (-55 to 150°C) and low reverse current (500uA).

Median Price

$0.781

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 400 parts In-Stock

1+ parts

$0.642

100+ parts

$0.437

1k+ parts

$0.303

10k+ parts

$0.260

400

$0.642

$0.437

$0.303

$0.260

Mouser Electronics

USA . 44 parts In-Stock

1+ parts

$0.920

100+ parts

$0.403

1k+ parts

$0.303

10k+ parts

$0.294

44

$0.920

$0.403

$0.303

$0.294

DigiKey

USA . 9 parts In-Stock

1+ parts

$0.930

100+ parts

$0.366

1k+ parts

$0.314

10k+ parts

$0.281

9

$0.930

$0.366

$0.314

$0.281

Verical

USA . 322 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.290

10k+ parts

$0.264

322

-

-

$0.290

$0.264

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 8,299 parts In-Stock

1+ parts

$4.534

100+ parts

-

1k+ parts

-

10k+ parts

-

8,299

$4.534

-

-

-

iodParts Technologies Inc.

India . 4,997 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,997

-

-

-

-

Overview

Discover the SDT3045VCT by Diodes Incorporated, a high-quality rectifier diode that offers fast soft recovery and superior performance. Manufactured by a trusted industry leader, this diode is designed for efficiency and reliability in a wide range of applications. The common cathode configuration and Schottky technology ensure optimal operation, while the matte tin terminal finish and flange mount package make installation a breeze. Experience the value and benefits of this versatile diode in your next project, delivering outstanding results with ease.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making the diode reliable for a variety of applications.

Maximum Reverse Current: 500 uA

Low reverse current ensures efficiency and reliability in the circuit.

Reverse Test Voltage: 45 V

Suitable for applications requiring a reverse voltage up to 45V.

No. of Terminals: 3

Provides flexibility in circuit connections and configuration.

Maximum Operating Temperature: 150 °C

Can operate efficiently in high-temperature environments, increasing the diode's versatility.

Diode Type: RECTIFIER DIODE

Ideal for rectification applications, ensuring smooth and efficient conversion of AC to DC.

Technology: SCHOTTKY

Schottky diodes have very low forward voltage drop, making them suitable for high-frequency applications.

Technical Specifications

Diodes & Rectifiers SDT3045VCT attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST SOFT RECOVERY

Minimum Breakdown Voltage:

45 V

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.5 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

250 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

45 V

Maximum Reverse Current:

500 uA

Reverse Test Voltage:

45 V

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

SDT3045VCT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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