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SDT3060VCT

Diodes Incorporated

SDT3060VCT by Diodes Incorporated

SDT3060VCT by Diodes Inc. is a Schottky rectifier diode with common cathode, 2 elements, and max reverse voltage of 60V. Ideal for fast soft recovery applications, it has a max output current of 15A and operates b/w -55°C to 150°C.

Median Price

$0.634

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 200 parts In-Stock

1+ parts

$0.634

100+ parts

$0.549

1k+ parts

$0.512

10k+ parts

$0.466

200

$0.634

$0.549

$0.512

$0.466

Mouser Electronics

USA . 128 parts In-Stock

1+ parts

$0.990

100+ parts

$0.547

1k+ parts

$0.408

10k+ parts

$0.364

128

$0.990

$0.547

$0.408

$0.364

Verical

USA . 22,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.284

10k+ parts

-

22,000

-

-

$0.284

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TME

Poland . 224 parts In-Stock

1+ parts

$0.820

100+ parts

$0.473

1k+ parts

$0.338

10k+ parts

-

224

$0.820

$0.473

$0.338

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 371 parts In-Stock

1+ parts

$4.572

100+ parts

-

1k+ parts

-

10k+ parts

-

371

$4.572

-

-

-

Metaverse IC Inc.

Canada . 70,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

70,000

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 29,580 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

29,580

-

-

-

-

Overview

Discover the SDT3060VCT by Diodes Incorporated, a high-quality diode with common cathode configuration and fast soft recovery application. This product offers reliable performance and efficiency, making it ideal for a wide range of electronic applications. With a maximum reverse test voltage of 60V and maximum output current of 15A, this diode provides exceptional value and benefits to customers looking for a dependable solution. Trust in Diodes Incorporated's expertise in manufacturing to deliver a superior product that meets your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, thus ensuring long-term reliability.

Maximum Reverse Current: 200 uA

Low reverse current minimizes power loss and improves efficiency in the circuit.

Reverse Test Voltage: 60 V

With a high reverse test voltage, this product can handle high voltage applications effectively.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this product to operate in a wide range of environmental conditions.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, this product is designed to efficiently convert AC to DC, making it suitable for power supply applications.

Technology: SCHOTTKY

Schottky diodes have a low forward voltage drop and fast switching speeds, making them ideal for high-frequency applications.

Technical Specifications

Diodes & Rectifiers SDT3060VCT attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST SOFT RECOVERY

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.6 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

200 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

200 uA

Reverse Test Voltage:

60 V

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

SDT3060VCT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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