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SDM1L20DCP3-7

Diodes Incorporated

SDM1L20DCP3-7 by Diodes Incorporated

SDM1L20DCP3-7 by Diodes Incorporated is a Schottky rectifier diode with 2 elements, common cathode config, and max reverse recovery time of 0.0086 us. It operates b/w -55 to 150 °C and has a peak forward current of 10 A. Ideal for efficiency applications due to its low forward voltage of 0.5 V.

Median Price

$0.220

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,124 parts In-Stock

1+ parts

$0.220

100+ parts

$0.126

1k+ parts

$0.079

10k+ parts

$0.048

1,124

$0.220

$0.126

$0.079

$0.048

Mouser Electronics

USA . 793 parts In-Stock

1+ parts

$0.220

100+ parts

$0.126

1k+ parts

$0.074

10k+ parts

$0.048

793

$0.220

$0.126

$0.074

$0.048

Verical

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.047

5,000

-

-

-

$0.047

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.076

5,000

-

-

-

$0.076

Nova Conductors

Japan . 61 parts In-Stock

1+ parts

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61

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 5,583 parts In-Stock

1+ parts

$0.021

100+ parts

$0.021

1k+ parts

$0.021

10k+ parts

-

5,583

$0.021

$0.021

$0.021

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Ampacity Inc.

Singapore . 4,835 parts In-Stock

1+ parts

$0.036

100+ parts

-

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10k+ parts

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4,835

$0.036

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Corohmni

South Africa . 6 parts In-Stock

1+ parts

$0.178

100+ parts

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6

$0.178

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Eastek

USA . 5,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.070

10k+ parts

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5,000

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$0.070

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Continental Prestige Electronics

USA . 4,449 parts In-Stock

1+ parts

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4,449

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Argo Parts USA

USA . 4,439 parts In-Stock

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4,439

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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Overview

Discover the unparalleled quality and reliability of the SDM1L20DCP3-7 by Diodes Incorporated, a leading manufacturer in the industry. This diode offers efficient performance and is perfect for applications where precision and durability are essential. With its common cathode configuration and Schottky technology, this diode ensures maximum output current and minimal forward voltage. Enhance your projects with the value and benefits that this diode provides, delivering exceptional results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package enhances the durability and reliability of the product.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration with 2 elements allows for efficient current flow and better performance in circuit applications.

Surface Mount: YES

Being surface mountable makes the product easier to install and provides space-saving benefits in electronic devices.

Maximum Reverse Recovery Time: 0.0086 us

The low reverse recovery time ensures fast switching and high efficiency in the product's operation.

Maximum Reverse Current: 100 uA

The low reverse current helps in reducing power losses and improving overall efficiency.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement and alignment in circuit designs.

Reverse Test Voltage: 20 V

The 20V reverse test voltage ensures the product can withstand higher voltage levels for reliable performance.

No. of Terminals: 3

Having 3 terminals provides flexibility in connecting the diode in various circuit configurations.

Package Style (Meter): CHIP CARRIER

The chip carrier style package offers compact size and efficient heat dissipation for improved thermal management.

Application: EFFICIENCY

Designed specifically for efficiency applications, ensuring optimal performance in power conversion and control.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature range allows the diode to work reliably in demanding environments.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature ensures the diode can function effectively even in cold conditions or during start-up phases.

Terminal Finish: NICKEL GOLD

The nickel gold terminal finish provides good conductivity and corrosion resistance, extending the product's lifespan.

Terminal Position: BOTTOM

The bottom terminal position facilitates easy soldering and circuit integration in electronic assemblies.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance allows for reliable solder reflow processes during assembly.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, it efficiently converts AC to DC and is suitable for various power supply applications.

Maximum Forward Voltage (VF): 0.5 V

The low forward voltage drop ensures minimal power loss and high efficiency in the product's operation.

Maximum Output Current: 0.5 A

Capable of handling up to 0.5A of output current, making it suitable for low to moderate power applications.

Technology: SCHOTTKY

Utilizing Schottky technology provides low forward voltage drop and fast switching characteristics for improved performance.

Terminal Form: NO LEAD

The no-lead terminal form offers convenience in assembly and reduces the risk of short circuits in the circuit layout.

No. of Elements: 2

Having 2 elements allows for efficient current handling and improved reliability in circuit operations.

Maximum Repetitive Peak Reverse Voltage: 20 V

With a maximum repetitive peak reverse voltage of 20V, the diode can handle varying voltage levels safely.

Maximum Non Repetitive Peak Forward Current: 10 A

Capable of handling high non-repetitive peak forward currents of up to 10A for short durations, making it suitable for surge protection applications.

Diode Element Material: SILICON

The use of silicon material in the diode elements ensures high reliability, temperature stability, and consistent performance.

Technical Specifications

Diodes & Rectifiers SDM1L20DCP3-7 attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

EFFICIENCY

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.5 V

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

10 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

20 V

Maximum Reverse Current:

100 uA

Maximum Reverse Recovery Time:

.0086 us

Reverse Test Voltage:

20 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

NICKEL GOLD

Terminal Form:

Terminal Position:

Trade Compliance

SDM1L20DCP3-7 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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