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SD09A160E

Diodes Incorporated

SD09A160E by Diodes Incorporated

The Diodes Inc. SD09A160E is a SIDAC diode with 150V min breakdown voltage and 170V max breakdown voltage. It operates b/w -40°C to 125°C, making it suitable for AC applications requiring reliable triggering at specific voltages. The device comes in a plastic/epoxy package with wire terminals, ideal for isolated axial connections in various electronic circuits.

Median Price

$0.040

Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 80,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.040

80,000

-

-

-

$0.040

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 63,987 parts In-Stock

1+ parts

$0.100

100+ parts

$0.060

1k+ parts

$0.050

10k+ parts

$0.040

63,987

$0.100

$0.060

$0.050

$0.040

QUARKTWIN TECHNOLOGY LTD

USA . 26,682 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

26,682

-

-

-

-

Overview

Discover a world of possibilities with the SD09A160E by Diodes Incorporated, a top-tier manufacturer known for excellence in silicon diode technology. This SIDAC device offers unparalleled quality and reliability, making it ideal for a wide range of applications. From lighting control to power supplies, this product delivers exceptional performance and efficiency. Experience peace of mind knowing you have a trusted partner in Diodes Incorporated, providing innovative solutions that exceed expectations. Elevate your projects with the SD09A160E and unlock the full potential of your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides good protection and durability for the diode, making it a suitable choice for various applications.

Minimum Breakdown Voltage: 150 V

The minimum breakdown voltage of 150 V ensures reliable performance and protection against voltage spikes in alternating current circuits.

Configuration: SINGLE

The single configuration simplifies the design and installation process, making it easier to incorporate this diode into different circuit setups.

Package Shape: ROUND

The round package shape makes it easy to mount and connect the diode in various circuit layouts, allowing for flexible integration.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this diode can withstand high-temperature environments, ensuring reliability under challenging conditions.

Trigger Device Type: SIDAC

Being a SIDAC trigger device type, this diode offers precise triggering and control capabilities, making it suitable for applications requiring accurate performance.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good conductivity and solderability, ensuring secure connections in circuit assemblies.

Maximum Breakdown Voltage: 170 V

The maximum breakdown voltage of 170 V offers an additional level of protection against overvoltage conditions, enhancing the overall reliability of the diode.

Technical Specifications

Silicone Diode For Alternating Current (SIDAC) SD09A160E attributes and parameters. Explore more Silicone Diode For Alternating Current (SIDAC) devices from Diodes Incorporated

Specs

Additional Features:

UL RECOGNIZED

Maximum Breakdown Voltage:

170 V

Minimum Breakdown Voltage:

150 V

Case Connection:

Configuration:

JEDEC-95 Code:

DO-41

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

Trigger Device Type:

Trade Compliance

SD09A160E Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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