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SBR10U200P5Q-13D

Diodes Incorporated

SBR10U200P5Q-13D by Diodes Incorporated

SBR10U200P5Q-13D by Diodes Inc. is a single rectifier diode with a max output current of 10A and peak repetitive reverse voltage of 200V. It features fast soft recovery for applications requiring high-speed switching capabilities. This small outline package diode operates b/w -65°C to 175°C, making it suitable for various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 34,000 parts In-Stock

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34,000

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Vyrian

USA . 245 parts In-Stock

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245

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 1,835 parts In-Stock

1+ parts

$0.080

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1,835

$0.080

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Corohmni

South Africa . 99 parts In-Stock

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$0.158

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99

$0.158

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Semicontronic

India . 1,454 parts In-Stock

1+ parts

$1.010

100+ parts

$0.985

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$0.980

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1,454

$1.010

$0.985

$0.980

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Ampacity Inc.

Singapore . 642 parts In-Stock

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$1.010

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642

$1.010

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AZTECH Wire

Italy . 204 parts In-Stock

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$16.956

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204

$16.956

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Continental Prestige Electronics

USA . 5,972 parts In-Stock

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5,972

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Argo Parts USA

USA . 3,311 parts In-Stock

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Bastille Electronics

Australia . 247 parts In-Stock

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247

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Overview

Experience superior performance and reliability with the SBR10U200P5Q-13D from Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated ensures top-quality products that meet the highest standards. This fast soft recovery diode is ideal for a wide range of applications, providing customers with unmatched efficiency and durability. Trust in the value and benefits of this product to elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the diode, making it suitable for various applications.

Maximum Reverse Current: 100 uA

Low reverse current ensures efficient operation and minimal power loss in the circuit.

Application: FAST SOFT RECOVERY

Fast soft recovery characteristics make this diode suitable for high-frequency applications where smooth switching is required.

Maximum Operating Temperature: 175 °C

High operating temperature range allows the diode to withstand heat and ensures reliable performance in challenging environments.

Peak Reflow Temperature °C: 260

Ability to withstand high reflow temperatures makes this diode suitable for surface mount assembly processes.

Diode Type: RECTIFIER DIODE

Rectifier diode design allows efficient conversion of AC to DC, making it ideal for rectification purposes in electronic circuits.

Technical Specifications

Diodes & Rectifiers SBR10U200P5Q-13D attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Additional Features:

FREE WHEELING DIODE, HIGH RELIABILITY

Application:

FAST SOFT RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.88 V

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

180 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

100 uA

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

SBR10U200P5Q-13D Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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