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SBR10H300D1-13

Diodes Incorporated

SBR10H300D1-13 by Diodes Incorporated

SBR10H300D1-13 by Diodes Inc. is a single rectifier diode with a max reverse voltage of 300V and forward voltage of 0.92V, ideal for applications requiring high output current up to 10A. This surface-mount diode operates b/w -55°C to 175°C, making it suitable for various electronic devices in need of efficient power management.

Median Price

$1.200

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,138 parts In-Stock

1+ parts

$1.200

100+ parts

$0.548

1k+ parts

-

10k+ parts

-

3,138

$1.200

$0.548

-

-

DigiKey

USA . 11,790 parts In-Stock

1+ parts

$1.420

100+ parts

$0.592

1k+ parts

$0.419

10k+ parts

-

11,790

$1.420

$0.592

$0.419

-

Verical

USA . 120,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.330

120,000

-

-

-

$0.330

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 78 parts In-Stock

1+ parts

$0.404

100+ parts

-

1k+ parts

-

10k+ parts

-

78

$0.404

-

-

-

Vyrian

USA . 3,023 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,023

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 410 parts In-Stock

1+ parts

$0.113

100+ parts

-

1k+ parts

-

10k+ parts

-

410

$0.113

-

-

-

Aztec Data Supply Inc.

USA . 775 parts In-Stock

1+ parts

$0.160

100+ parts

-

1k+ parts

-

10k+ parts

-

775

$0.160

-

-

-

Semicontronic

India . 3,374 parts In-Stock

1+ parts

$0.250

100+ parts

$0.244

1k+ parts

$0.242

10k+ parts

-

3,374

$0.250

$0.244

$0.242

-

Ampacity Inc.

Singapore . 3,049 parts In-Stock

1+ parts

$0.250

100+ parts

-

1k+ parts

-

10k+ parts

-

3,049

$0.250

-

-

-

Bastille Electronics

Australia . 500 parts In-Stock

1+ parts

$0.404

100+ parts

$0.384

1k+ parts

$0.365

10k+ parts

$0.360

500

$0.404

$0.384

$0.365

$0.360

Continental Prestige Electronics

USA . 4,867 parts In-Stock

1+ parts

$0.404

100+ parts

-

1k+ parts

-

10k+ parts

$0.396

4,867

$0.404

-

-

$0.396

Argo Parts USA

USA . 2,949 parts In-Stock

1+ parts

$0.404

100+ parts

-

1k+ parts

-

10k+ parts

$0.392

2,949

$0.404

-

-

$0.392

Overview

Elevate your electronic designs with the SBR10H300D1-13 by Diodes Incorporated. Crafted with precision and expertise, this rectifier diode offers unparalleled quality and reliability. Ideal for a wide range of applications, from power supplies to automotive electronics, this small outline diode delivers exceptional performance with its high breakdown voltage and low forward voltage. Trust in Diodes Incorporated to provide you with cutting-edge technology that exceeds expectations. Choose the SBR10H300D1-13 for unmatched value and efficiency in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and protection to the diode, ensuring reliability and durability.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards, saving space and reducing assembly time.

Maximum Reverse Current: 10 uA

Low maximum reverse current reduces power loss and improves efficiency of the diode.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for use in a wide range of environments and conditions.

Maximum Forward Voltage (VF): 0.92 V

Low maximum forward voltage drop results in minimal power loss and improved performance.

Technical Specifications

Diodes & Rectifiers SBR10H300D1-13 attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Application:

GENERAL PURPOSE

Minimum Breakdown Voltage:

300 V

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.92 V

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

110 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

300 V

Maximum Reverse Current:

10 uA

Reverse Test Voltage:

300 V

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

SBR10H300D1-13 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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