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SBR10M100P5Q-13D

Diodes Incorporated

SBR10M100P5Q-13D by Diodes Incorporated

SBR10M100P5Q-13D by Diodes Incorporated is a single rectifier diode with a max reverse recovery time of 0.018 us and max output current of 10 A. It is designed for fast soft recovery applications, operating b/w -55 to 175 °C, with a peak reflow temperature of 260°C.

Median Price

$0.742

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 4,131 parts In-Stock

1+ parts

$1.260

100+ parts

$0.509

1k+ parts

$0.352

10k+ parts

$0.265

4,131

$1.260

$0.509

$0.352

$0.265

Verical

USA . 25,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.225

25,000

-

-

-

$0.225

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,225 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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4,225

-

-

-

-

Nova Conductors

Japan . 750 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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750

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 228 parts In-Stock

1+ parts

$0.053

100+ parts

-

1k+ parts

-

10k+ parts

-

228

$0.053

-

-

-

Aztec Data Supply Inc.

USA . 1,629 parts In-Stock

1+ parts

$0.100

100+ parts

-

1k+ parts

-

10k+ parts

-

1,629

$0.100

-

-

-

Ampacity Inc.

Singapore . 24,671 parts In-Stock

1+ parts

$0.191

100+ parts

-

1k+ parts

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10k+ parts

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24,671

$0.191

-

-

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AZTECH Wire

Italy . 577 parts In-Stock

1+ parts

$20.750

100+ parts

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577

$20.750

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Continental Prestige Electronics

USA . 4,487 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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4,487

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Bastille Electronics

Australia . 3,200 parts In-Stock

1+ parts

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3,200

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Argo Parts USA

USA . 39 parts In-Stock

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39

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Overview

Experience the difference with the SBR10M100P5Q-13D by Diodes Incorporated, a leading manufacturer in the industry. This high-quality rectifier diode offers fast soft recovery and a maximum output current of 10A, making it ideal for various applications. With a maximum reverse recovery time of 0.018 us and a maximum reverse current of 2 uA, this diode ensures efficient performance and reliability. Trust in Diodes Incorporated to deliver cutting-edge technology and superior products that provide value and benefits to customers in need of top-notch rectification solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material provides good insulation and protection for the diode, ensuring durability and reliability in various operating conditions.

Maximum Reverse Recovery Time: 0.018 us

The fast reverse recovery time of 0.018 us allows for efficient switching and reduces power losses, making it ideal for high-frequency applications.

Maximum Output Current: 10 A

With a maximum output current of 10 A, this diode can handle higher power levels, making it suitable for applications with higher demanding power requirements.

Technology: AVALANCHE

The avalanche technology used in this diode allows for higher voltage ratings and better transient voltage suppression, making it suitable for over-voltage protection and surge suppression applications.

Technical Specifications

Diodes & Rectifiers SBR10M100P5Q-13D attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY, LOW LEAKAGE CURRENT

Application:

FAST SOFT RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.88 V

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

220 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

2 uA

Maximum Reverse Recovery Time:

.018 us

Reverse Test Voltage:

100 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

SBR10M100P5Q-13D Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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