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MMBZ5226BQ-7-F

Diodes Incorporated

MMBZ5226BQ-7-F by Diodes Incorporated

MMBZ5226BQ-7-F by Diodes Inc. is a Zener diode with 3.3V nominal reference voltage, 20mA test current, and 28 ohm dynamic impedance. It is ideal for applications requiring precise voltage regulation in automotive electronics, with AEC-Q101 standard compliance and -65 to 150°C operating temperature range.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 11,180 parts In-Stock

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11,180

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Nova Conductors

Japan . 800 parts In-Stock

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800

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 280 parts In-Stock

1+ parts

$0.121

100+ parts

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280

$0.121

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Ampacity Inc.

Singapore . 207 parts In-Stock

1+ parts

$1.010

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207

$1.010

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AZTECH Wire

Italy . 1,034 parts In-Stock

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$15.330

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1,034

$15.330

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Argo Parts USA

USA . 4,571 parts In-Stock

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4,571

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Continental Prestige Electronics

USA . 2,785 parts In-Stock

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2,785

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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Overview

Discover the superior quality and reliability of Diodes Incorporated's MMBZ5226BQ-7-F Zener Diode. With a wide range of applications in electronics, this single-configured diode offers customers exceptional value and benefits. Experience peace of mind knowing that this small outline package delivers precise voltage regulation with a maximum voltage tolerance of 4.99%. Whether you're designing automotive electronics or consumer devices, trust in the unmatched performance of the MMBZ5226BQ-7-F for all your voltage protection needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and protection for the zener diode, making it suitable for a variety of applications.

Working Test Current: 20 mA

The high working test current of 20 mA indicates that this zener diode can handle a significant amount of current, making it reliable for various circuits.

Surface Mount: YES

The surface mount capability allows for easy and convenient installation on PCBs, saving space and simplifying assembly.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this zener diode can withstand elevated temperatures, ensuring stable performance in demanding environments.

Nominal Reference Voltage: 3.3 V

The 3.3V nominal reference voltage makes this zener diode suitable for voltage regulation and protection applications in a variety of electronic circuits.

Technical Specifications

Zener Diodes MMBZ5226BQ-7-F attributes and parameters. Explore more Zener Diodes devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

28 ohm

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.35 W

Reference Standard:

AEC-Q101

Nominal Reference Voltage:

3.3 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

4.99 %

Working Test Current:

20 mA

Trade Compliance

MMBZ5226BQ-7-F Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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