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MBRF20100CT-JT

Diodes Incorporated

MBRF20100CT-JT by Diodes Incorporated

MBRF20100CT-JT by Diodes Inc. is a Schottky rectifier diode with 100V max repetitive peak reverse voltage, 0.84V max forward voltage, and 10A max output current. Commonly used in automotive electronics due to AEC-Q101 standard compliance and high temp range of -55°C to 175°C.

Median Price

$0.155

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 2,500 parts In-Stock

1+ parts

$0.155

100+ parts

$0.141

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$0.127

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2,500

$0.155

$0.141

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Distributors (In-Stock)

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Chip Stock

USA . 29,000 parts In-Stock

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Vyrian

USA . 8,315 parts In-Stock

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ComSIT Distribution GmbH

Germany . 200 parts In-Stock

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ComSIT USA

USA . 200 parts In-Stock

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200

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Ampacity Inc.

Singapore . 2,428 parts In-Stock

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$0.132

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

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$0.155

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$0.141

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$0.127

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2,500

$0.155

$0.141

$0.127

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AZTECH Wire

Italy . 1,154 parts In-Stock

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$19.940

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$19.940

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Metaverse IC Inc.

Canada . 70,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 26,056 parts In-Stock

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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Lixinc

USA . 17,932 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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Perfect Parts

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Overview

Experience superior quality and reliability with the MBRF20100CT-JT by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated ensures top-notch performance and durability. This rectifier diode is perfect for a wide range of applications, offering customers unmatched value and benefits. Trust in the MBRF20100CT-JT to deliver efficient power management and exceptional results. Make the smart choice for your electronic needs with Diodes Incorporated.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this diode lightweight and durable, perfect for various applications.

Config: COMMON CATHODE

The common cathode configuration allows for easy integration into circuit designs, enhancing efficiency.

Maximum Reverse Current: 50 uA

With a low reverse current, this diode ensures minimal power loss and improved performance.

Package Shape: RECTANGULAR

The rectangular shape of the package offers a compact design, saving space in electronic systems.

No. of Terminals: 3

Having three terminals provides flexibility in circuit connections, making the diode versatile for different setups.

Package Style: FLANGE MOUNT

The flange mount package style allows for secure mounting on circuit boards, ensuring reliable operation.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature range enables the diode to withstand a wide range of environmental conditions.

Minimum Operating Temperature: -55 °C

With a low minimum operating temperature, this diode remains operational even in extreme cold conditions.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent conductivity and solderability, ensuring stable connections.

Terminal Position: SINGLE

The single terminal position simplifies installation and connection process, improving overall ease of use.

Technical Specifications

Diodes & Rectifiers MBRF20100CT-JT attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Application:

GENERAL PURPOSE

Case Connection:

ISOLATED

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.84 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

50 uA

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRF20100CT-JT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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