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MBR20150CT-LJ

Diodes Incorporated

MBR20150CT-LJ by Diodes Incorporated

MBR20150CT-LJ by Diodes Inc. is a Schottky rectifier diode with 150V peak reverse voltage and 10A output current. Common cathode configuration, suitable for automotive applications due to AEC-Q101 compliance. Operating temperature range from -55°C to 175°C makes it ideal for various electronic systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 18,626 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 3,823 parts In-Stock

1+ parts

$0.033

100+ parts

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3,823

$0.033

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Advanced Electronics

New Zealand . 70 parts In-Stock

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$0.073

100+ parts

$0.066

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$0.060

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70

$0.073

$0.066

$0.060

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Corohmni

South Africa . 880 parts In-Stock

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$0.161

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880

$0.161

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Ampacity Inc.

Singapore . 195 parts In-Stock

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$1.010

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195

$1.010

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Decca Corp

Germany . 845 parts In-Stock

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$2.010

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$1.970

1k+ parts

$1.950

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845

$2.010

$1.970

$1.950

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AZTECH Wire

Italy . 835 parts In-Stock

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$11.595

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835

$11.595

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QUARKTWIN TECHNOLOGY LTD

USA . 26,463 parts In-Stock

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Lixinc

USA . 5,849 parts In-Stock

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Continental Prestige Electronics

USA . 5,252 parts In-Stock

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Argo Parts USA

USA . 4,484 parts In-Stock

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4,484

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Perfect Parts

USA . 302 parts In-Stock

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302

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Aranea Global

USA . 50 parts In-Stock

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Overview

Discover the exceptional performance and reliability of the MBR20150CT-LJ by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-quality diodes & rectifiers for a wide range of applications. With its common cathode configuration and Schottky technology, this rectifier diode offers customers maximum output current of 10A and a maximum repetitive peak reverse voltage of 150V. Trust in Diodes Incorporated to provide innovative solutions that meet your needs with precision and efficiency. Upgrade your projects today with the MBR20150CT-LJ and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan.

Configuration: COMMON CATHODE, 2 ELEMENTS

Allows for efficient and effective current flow management in the circuit.

Maximum Reverse Current: 50 uA

Low reverse current ensures minimal power loss and efficient operation.

Package Shape: RECTANGULAR

Sleek design and compact shape make it easy to integrate into various electronic devices.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, suitable for industrial and automotive applications.

Technology: SCHOTTKY

Schottky diodes have fast switching speeds and low forward voltage drop, making them ideal for high-frequency applications.

Maximum Output Current: 10 A

High output current capacity allows for use in power-hungry devices and circuits.

Maximum Repetitive Peak Reverse Voltage: 150 V

Can handle high reverse voltage, making it suitable for a wide range of applications.

Technical Specifications

Diodes & Rectifiers MBR20150CT-LJ attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Application:

GENERAL PURPOSE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.9 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

170 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

150 V

Maximum Reverse Current:

50 uA

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR20150CT-LJ Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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