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GBL410_HF

Diodes Incorporated

GBL410_HF by Diodes Incorporated

GBL410_HF by Diodes Inc. is a bridge rectifier diode with 4 elements, max reverse current of 5uA, and max output current of 2.4A. It operates b/w -55 to 150°C, has a reverse test voltage of 1000V, and is ideal for applications requiring high voltage rectification in electronic circuits.

Median Price

$0.486

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 661 parts In-Stock

1+ parts

$0.640

100+ parts

-

1k+ parts

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10k+ parts

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661

$0.640

-

-

-

DigiKey

USA . 23 parts In-Stock

1+ parts

$0.650

100+ parts

$0.380

1k+ parts

-

10k+ parts

$0.332

23

$0.650

$0.380

-

$0.332

Verical

USA . 6,650 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.332

10k+ parts

-

6,650

-

-

$0.332

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Future Electronics

Canada . 50 parts In-Stock

1+ parts

-

100+ parts

$0.330

1k+ parts

$0.315

10k+ parts

$0.295

50

-

$0.330

$0.315

$0.295

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,764 parts In-Stock

1+ parts

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3,764

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NAC Semi

USA . 3,475 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.471

10k+ parts

$0.440

3,475

-

-

$0.471

$0.440

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 339 parts In-Stock

1+ parts

$5.627

100+ parts

-

1k+ parts

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339

$5.627

-

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Microchip USA

USA . 3,966 parts In-Stock

1+ parts

$5.720

100+ parts

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3,966

$5.720

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Northwest PG Solutions

USA . 1,073 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$5.514

10k+ parts

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1,073

-

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$5.514

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

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1,000

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Eastek

USA . 25 parts In-Stock

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25

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GreenTree Electronics

Israel . 25 parts In-Stock

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25

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Overview

Upgrade your electronic designs with the GBL410_HF Bridge Rectifier Diode by Diodes Incorporated. Manufactured with top-notch quality and reliability, this product offers a wide range of applications in various industries. Benefit from its high performance and efficiency, delivering a seamless operation for your projects. With a maximum reverse voltage of 1000V and a maximum output current of 2.4A, this diode provides exceptional value to customers seeking superior quality components for their applications. Choose Diodes Incorporated for cutting-edge technology and unmatched performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode elements, ensuring a longer lifespan for the product.

Maximum Reverse Current: 5 uA

Low reverse current ensures efficient performance and helps in minimizing power loss.

Reverse Test Voltage: 1000 V

High reverse test voltage capability makes this diode suitable for applications requiring high voltage handling.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for usage in various environmental conditions without compromising performance.

Minimum Breakdown Voltage: 1000 V

High minimum breakdown voltage ensures reliable operation and protection against voltage spikes.

Technical Specifications

Bridge Rectifier Diodes GBL410_HF attributes and parameters. Explore more Bridge Rectifier Diodes devices from Diodes Incorporated

Specs

Minimum Breakdown Voltage:

1000 V

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

R-PSIP-T4

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

2.4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

1000 V

Maximum Reverse Current:

5 uA

Reverse Test Voltage:

1000 V

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

GBL410_HF Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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