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GBL408

Diodes Incorporated

GBL408 by Diodes Incorporated

GBL408 by Diodes Inc. is a bridge rectifier diode with 4 elements, max output current of 2.4A, and max repetitive peak reverse voltage of 800V. It is used in applications requiring rectification of AC to DC power sources due to its UL recognized standard and silicon diode element material. Operating temp range: -55°C to 150°C.

Median Price

$0.648

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Avnet

USA . 7,500 parts In-Stock

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7,500

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Distributors (In-Stock)

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Nova Conductors

Japan . 89 parts In-Stock

1+ parts

$0.648

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89

$0.648

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Sensible Micro Corp

USA . 34,200 parts In-Stock

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34,200

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Vyrian

USA . 7,071 parts In-Stock

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7,071

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Distributors (Availability)

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Netroflash

USA . 50 parts In-Stock

1+ parts

$0.648

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50

$0.648

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Microchip USA

USA . 9,026 parts In-Stock

1+ parts

$3.510

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9,026

$3.510

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Metaverse IC Inc.

Canada . 88,000 parts In-Stock

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88,000

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QUARKTWIN TECHNOLOGY LTD

USA . 15,519 parts In-Stock

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15,519

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Infinite Electronics LLP (Excess)

. 9,999 parts In-Stock

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9,999

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Glotronic Ltd.

UK . 4,100 parts In-Stock

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4,100

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Authorized Procurement Solutions

USA . 900 parts In-Stock

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900

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Overview

Elevate your electronics with the GBL408 Bridge Rectifier Diode by Diodes Incorporated. Manufactured with precision and expertise, this diode offers reliable performance and durability for a variety of applications. With its high breakdown voltage and output current, this diode ensures efficient power conversion and stable operation. Whether you're designing power supplies, converters, or motor controls, the GBL408 provides the value, benefits, and advantages that customers need for their projects. Trust in Diodes Incorporated to deliver quality products that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan.

Configuration: BRIDGE, 4 ELEMENTS

Allows for efficient AC to DC conversion with 4 elements working in tandem.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for a wide range of applications.

Minimum Breakdown Voltage: 800 V

With a high breakdown voltage, this bridge rectifier diode offers reliable performance under high voltage conditions.

Maximum Output Current: 2.4 A

Capable of handling high output currents, making it suitable for power applications.

Technical Specifications

Bridge Rectifier Diodes GBL408 attributes and parameters. Explore more Bridge Rectifier Diodes devices from Diodes Incorporated

Specs

Minimum Breakdown Voltage:

800 V

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

R-PSIP-T4

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

2.4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

255

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

800 V

Sub-Category:

Bridge Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

GBL408 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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