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GBL408_HF

Diodes Incorporated

GBL408_HF by Diodes Incorporated

GBL408_HF by Diodes Inc. is a bridge rectifier diode with 4 elements, capable of handling up to 2.4A output current and 800V reverse voltage. It features a plastic/epoxy package body suitable for applications requiring high peak forward current such as power supplies and industrial equipment.

Median Price

$0.175

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 17,875 parts In-Stock

1+ parts

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$0.175

17,875

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$0.175

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 17,865 parts In-Stock

1+ parts

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17,865

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Nova Conductors

Japan . 92 parts In-Stock

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92

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 17,766 parts In-Stock

1+ parts

$0.324

100+ parts

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17,766

$0.324

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Glotronic Ltd.

UK . 4,100 parts In-Stock

1+ parts

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4,100

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Bastille Electronics

Australia . 800 parts In-Stock

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800

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Overview

Unlock the power of reliable and efficient electrical connections with the GBL408_HF Bridge Rectifier Diode by Diodes Incorporated. Manufactured with top-quality materials and advanced technology, this product offers exceptional performance and durability for a wide range of applications. From industrial machinery to consumer electronics, this bridge rectifier diode provides stable power conversion, ensuring smooth operation and enhanced safety. Trust in Diodes Incorporated to deliver excellence in every component, giving you peace of mind and superior results in your projects. Choose the GBL408_HF for unmatched quality and performance in your electrical systems.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides good insulation and protection for the diodes, making them durable and reliable for long-term use.

Config: BRIDGE, 4 ELEMENTS

The bridge configuration with 4 elements allows for full-wave rectification, making the diodes suitable for converting AC to DC with high efficiency.

Maximum Reverse Current: 5 uA

The low maximum reverse current ensures minimal leakage and power loss, making the diodes efficient for various applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and integration into circuit designs, providing flexibility for installation.

Reverse Test Voltage: 800 V

The high reverse test voltage of 800 V ensures reliable operation and protection against voltage spikes and surges in the circuit.

No. of Terminals: 4

Having 4 terminals allows for easy connectivity and soldering in the circuit, ensuring secure and stable connections for the diodes.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures stable performance in harsh environmental conditions, making the diodes suitable for a wide range of applications.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55°C ensures reliable operation even in cold environments, providing versatility for use in different temperature conditions.

Terminal Finish: BRIGHT TIN

The bright tin terminal finish provides good conductivity and corrosion resistance, ensuring long-lasting performance and reliability for the diodes.

Minimum Breakdown Voltage: 800 V

The high minimum breakdown voltage of 800 V ensures protection against voltage surges and spikes, making the diodes suitable for high-power applications.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C allows for reliable soldering and rework processes, ensuring secure connections for the diodes in the circuit.

Reference Standard: UL RECOGNIZED

Being UL Recognized indicates that the diodes meet strict safety and quality standards, providing assurance of reliability and performance.

Diode Type: BRIDGE RECTIFIER DIODE

The bridge rectifier diode type is ideal for converting AC to DC with high efficiency, making the diodes suitable for various power supply and rectification applications.

Maximum Forward Voltage (VF): 1 V

The low maximum forward voltage of 1 V ensures minimal power loss and efficient conversion of AC to DC, making the diodes energy-efficient for different applications.

Maximum Output Current: 2.4 A

The high maximum output current of 2.4 A allows the diodes to handle high power loads and currents, making them suitable for various power supply applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form allows for easy and secure mounting on PCBs, providing mechanical stability and reliability for the diodes in the circuit.

No. of Elements: 4

Having 4 elements in the diode allows for full-wave rectification, ensuring efficient conversion of AC to DC and high power handling capabilities.

Maximum Repetitive Peak Reverse Voltage: 800 V

The high maximum repetitive peak reverse voltage of 800 V ensures reliable operation and protection against voltage spikes in the circuit, making the diodes suitable for high-voltage applications.

Maximum Non Repetitive Peak Forward Current: 135 A

The high maximum non-repetitive peak forward current of 135 A allows the diodes to handle short-duration high currents without damage, making them suitable for high-power applications.

Diode Element Material: SILICON

The use of silicon as the diode element material provides good conduction and switching characteristics, ensuring efficient performance and reliability for the diodes in various applications.

Technical Specifications

Bridge Rectifier Diodes GBL408_HF attributes and parameters. Explore more Bridge Rectifier Diodes devices from Diodes Incorporated

Specs

Minimum Breakdown Voltage:

800 V

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

R-PSIP-T4

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

135 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

2.4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

800 V

Maximum Reverse Current:

5 uA

Reverse Test Voltage:

800 V

Surface Mount:

NO

Terminal Finish:

BRIGHT TIN

Terminal Form:

Terminal Position:

Trade Compliance

GBL408_HF Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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