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GB0400034

Diodes Incorporated

GB0400034 by Diodes Incorporated

Diodes Inc. GB0400034 crystal oscillator offers 30 ppm frequency tolerance, 30% stability, and 80 ohm series resistance. Ideal for applications requiring a 4 MHz nominal operating frequency, such as industrial automation systems and communication devices.

Median Price

$0.490

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 62 parts In-Stock

1+ parts

$0.470

100+ parts

$0.354

1k+ parts

$0.307

10k+ parts

$0.267

62

$0.470

$0.354

$0.307

$0.267

Mouser Electronics

USA . 185 parts In-Stock

1+ parts

$0.510

100+ parts

$0.340

1k+ parts

$0.266

10k+ parts

$0.243

185

$0.510

$0.340

$0.266

$0.243

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

$0.366

1k+ parts

$0.180

10k+ parts

-

1,000

-

$0.366

$0.180

-

Dan-Mar Components

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 520 parts In-Stock

1+ parts

$0.519

100+ parts

-

1k+ parts

-

10k+ parts

-

520

$0.519

-

-

-

Northwest PG Solutions

USA . 219 parts In-Stock

1+ parts

$0.571

100+ parts

-

1k+ parts

-

10k+ parts

-

219

$0.571

-

-

-

Perfect Parts

USA . 6,720 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,720

-

-

-

-

Overview

Experience superior performance and reliability with the GB0400034 Crystal Oscillator by Diodes Incorporated. As a trusted manufacturer in the industry, Diodes Incorporated ensures top-quality products that meet the highest standards. Ideal for a wide range of applications, this crystal oscillator offers precise frequency control and stability, making it perfect for use in various electronic devices. With a focus on value and efficiency, the GB0400034 provides customers with unmatched benefits and advantages, guaranteeing a seamless user experience. Choose Diodes Incorporated for exceptional quality and performance you can rely on.

Feature Benefit Bullets

Frequency Tolerance: 30 ppm

Accurate frequency output ensures reliable performance in various applications.

Frequency Stability: 30 %

Provides stable frequency output, crucial for maintaining precision in operations.

Series Resistance: 80 ohm

Low series resistance helps in efficient power consumption and signal transmission.

Minimum Operating Temperature: -25 °C

Wide operating temperature range allows for use in diverse environmental conditions.

Crystal or Resonator Type: PARALLEL - FUNDAMENTAL

This type ensures a fundamental frequency with stable performance over time.

Nominal Operating Frequency: 4 MHz

Suitable frequency for various applications requiring precise timing and synchronization.

Aging: 5 PPM/FIRST YEAR

Low aging rate ensures long-term frequency stability and reliability.

Load Capacitance: 30 pF

Optimal load capacitance for efficient signal processing and minimal signal distortions.

Mounting Feature: THROUGH HOLE MOUNT

Easy and secure mounting option for stable placement in electronic circuits.

Drive Level: 100 uW

Efficient drive level for maintaining signal integrity and minimizing power consumption.

Physical Dimension: L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

Compact size for easy integration into various electronic devices or systems.

Maximum Operating Temperature: 70 °C

High maximum operating temperature allows for reliable performance even in elevated temperature conditions.

Technical Specifications

Crystal Oscillators GB0400034 attributes and parameters. Explore more Crystal Oscillators devices from Diodes Incorporated

Specs

Additional Features:

AT CUT; BAG

Crystal or Resonator Type:

Drive Level:

100 uW

Frequency Stability:

30 %

Frequency Tolerance:

Load Capacitance:

30 pF

Mounting Feature:

Nominal Operating Frequency:

4 MHz

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-25 Cel

Physical Dimension:

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

Series Resistance:

80 ohm

Trade Compliance

GB0400034 Crystals & Resonators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.60.00.30

SB

8541.60.00.25

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

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