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G43270017

Diodes Incorporated

G43270017 by Diodes Incorporated

Diodes Inc. G43270017 crystal oscillator offers 20 ppm frequency tolerance, 126% stability, and 5000 ohm series resistance. Ideal for applications requiring precise timing such as communication systems, industrial controls, and consumer electronics. Operating range from -40 to 85 °C with a compact surface mount design of L8.0XB3.8XH2.5 (mm).

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 855 parts In-Stock

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855

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 199 parts In-Stock

1+ parts

$18.580

100+ parts

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199

$18.580

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Bastille Electronics

Australia . 50 parts In-Stock

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Overview

Elevate your electronic devices with the G43270017 Crystal Oscillator by Diodes Incorporated, known for its superior quality and precision engineering. This versatile component offers a frequency tolerance of 20 ppm, ensuring reliable performance in a variety of applications. Whether it's in telecommunications, consumer electronics, or industrial equipment, this crystal oscillator delivers exceptional frequency stability and efficiency. Experience the value and benefits of this product, from its high level of accuracy to its wide operating temperature range. Upgrade your technology with the G43270017 and unlock a world of possibilities.

Feature Benefit Bullets

Frequency Tolerance: 20 ppm

This tight frequency tolerance ensures accurate and stable performance in applications where precise timing is essential.

Frequency Stability: 126 %

The high frequency stability of 126% ensures consistent performance over a wide range of operating conditions.

Series Resistance: 5000 ohm

The low series resistance helps in minimizing power consumption and improving overall efficiency of the crystal oscillator.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40 °C, this crystal oscillator is suitable for use in harsh environmental conditions.

Terminal Finish: Matte Tin (Sn)

The matte tin terminal finish provides good solderability and ensures reliable electrical connections.

Crystal or Resonator Type: PARALLEL - FUNDAMENTAL

The parallel fundamental crystal resonator type offers high precision and stability in frequency generation.

Nominal Operating Frequency: 0.032768 MHz

The nominal operating frequency of 0.032768 MHz makes this crystal oscillator suitable for various clock and timing applications.

Aging: 5 PPM/FIRST YEAR

With an aging rate of 5 ppm per year, this crystal oscillator maintains its frequency accuracy over an extended period.

Load Capacitance: 12.5 pF

The load capacitance of 12.5 pF ensures optimal performance and stability in the crystal circuit.

Mounting Feature: SURFACE MOUNT

The surface mounting feature offers easy and secure installation on PCBs, saving space and simplifying assembly.

Drive Level: 1 uW

The low drive level requirement of 1 uW helps in conserving power and extending battery life in portable devices.

Physical Dimension: L8.0XB3.8XH2.5 (mm)/L0.315XB0.15XH0.098 (inch)

The compact physical dimensions make this crystal oscillator suitable for applications with space constraints.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this crystal oscillator can withstand high temperature environments without degradation in performance.

Technical Specifications

Crystal Oscillators G43270017 attributes and parameters. Explore more Crystal Oscillators devices from Diodes Incorporated

Specs

Additional Features:

TAPE AND REEL

Crystal or Resonator Type:

Drive Level:

1 uW

Frequency Stability:

126 %

Frequency Tolerance:

JESD-609 Code:

e3

Load Capacitance:

12.5 pF

Mounting Feature:

Nominal Operating Frequency:

.032768 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Physical Dimension:

L8.0XB3.8XH2.5 (mm)/L0.315XB0.15XH0.098 (inch)

Series Resistance:

5000 ohm

Terminal Finish:

Matte Tin (Sn)

Trade Compliance

G43270017 Crystals & Resonators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.60.00.10

SB

8541.60.00.25

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

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