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G43270009

Diodes Incorporated

G43270009 by Diodes Incorporated

Diodes Inc. G43270009 crystal oscillator offers 20 ppm frequency tolerance, 126% stability, and 50000 ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal frequency, such as IoT devices and communication systems. Operating range from -40 to 85 °C with surface mount feature.

Median Price

$0.366

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 3,040 parts In-Stock

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$0.490

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$0.372

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$0.323

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$0.490

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Mouser Electronics

USA . 2,624 parts In-Stock

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$0.490

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$0.372

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$0.324

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$0.289

2,624

$0.490

$0.372

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$0.289

Arrow

USA . 3,000 parts In-Stock

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$0.235

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Verical

USA . 3,000 parts In-Stock

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$0.241

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$0.241

Distributors (In-Stock)

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Nova Conductors

Japan . 500 parts In-Stock

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$0.306

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$0.306

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Vyrian

USA . 1,952 parts In-Stock

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Inventory MP

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Bristol Electronics

USA . 1,541 parts In-Stock

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Prism Electronics

USA . 55 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.306

100+ parts

-

1k+ parts

$0.291

10k+ parts

$0.285

1,000

$0.306

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$0.291

$0.285

Lixinc

USA . 3,633 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Kepictronics

USA . 1,082 parts In-Stock

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Perfect Parts

USA . 34 parts In-Stock

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Overview

Discover the precision and reliability of the G43270009 crystal oscillator by Diodes Incorporated. With a frequency tolerance of 20 ppm and exceptional stability, this high-quality component is perfect for a wide range of applications. Whether you're in the automotive, telecommunications, or industrial sector, this crystal oscillator offers unmatched performance and longevity. Trust in Diodes Incorporated's reputation for excellence and experience the value this product brings to your projects.

Feature Benefit Bullets

Frequency Tolerance: 20 ppm

This tight frequency tolerance ensures accurate and stable frequency output, making it suitable for precision applications.

Frequency Stability: 126 %

The high frequency stability of 126% ensures that the crystal oscillator maintains consistent performance over a wide range of operating conditions.

Series Resistance: 50000 ohm

The high series resistance helps in minimizing signal loss and optimizing the performance of the crystal oscillator.

Minimum Operating Temperature: -40 °C

The wide minimum operating temperature range of -40°C allows for reliable operation in harsh environmental conditions.

Crystal or Resonator Type: PARALLEL - FUNDAMENTAL

The parallel fundamental type crystal or resonator offers high frequency stability and low phase noise, making it ideal for precision applications.

Nominal Operating Frequency: 0.032768 MHz

The specified nominal operating frequency of 0.032768 MHz ensures that the crystal oscillator operates at the intended frequency for accurate timing applications.

Aging: 3 PPM/FIRST YEAR

The low aging rate of 3 ppm per year ensures long-term frequency stability and reliability of the crystal oscillator.

Load Capacitance: 12.5 pF

The specified load capacitance of 12.5 pF ensures optimal tuning and performance of the crystal oscillator in different circuit configurations.

Mounting Feature: SURFACE MOUNT

The surface mounting feature allows for easy installation on circuit boards, saving space and facilitating automated assembly.

Drive Level: 1 uW

The low drive level requirement of 1 uW minimizes power consumption and ensures efficient operation of the crystal oscillator.

Physical Dimension: L8.0XB3.8XH2.5 (mm)/L0.315XB0.15XH0.098 (inch)

The compact physical dimensions make this crystal oscillator suitable for space-constrained applications where size is a critical factor.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C ensures reliable performance even in elevated temperature environments.

Technical Specifications

Crystal Oscillators G43270009 attributes and parameters. Explore more Crystal Oscillators devices from Diodes Incorporated

Specs

Additional Features:

TAPE AND REEL

Crystal or Resonator Type:

Drive Level:

1 uW

Frequency Stability:

126 %

Frequency Tolerance:

Load Capacitance:

12.5 pF

Mounting Feature:

Nominal Operating Frequency:

.032768 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Physical Dimension:

L8.0XB3.8XH2.5 (mm)/L0.315XB0.15XH0.098 (inch)

Series Resistance:

50000 ohm

Trade Compliance

G43270009 Crystals & Resonators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.60.00.10

SB

8541.60.00.25

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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