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FY1200112

Diodes Incorporated

FY1200112 by Diodes Incorporated

Diodes Inc. FY1200112 is a 12MHz crystal oscillator with 3PPM aging, suitable for surface mount applications. Operating at 10uW drive level, it measures L5.0xB3.2xH0.9 (mm) and is ideal for precision timing in electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,304 parts In-Stock

1+ parts

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5,304

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Nova Conductors

Japan . 78 parts In-Stock

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78

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,035 parts In-Stock

1+ parts

$4.010

100+ parts

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1,035

$4.010

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AZTECH Wire

Italy . 782 parts In-Stock

1+ parts

$21.640

100+ parts

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782

$21.640

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Kepictronics

USA . 15,000 parts In-Stock

1+ parts

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15,000

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

1+ parts

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6,000

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Netroflash

USA . 100 parts In-Stock

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100

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Overview

Experience exceptional precision and reliability with the FY1200112 crystal oscillator from Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated ensures top-quality products that are perfect for a wide range of applications. Whether you're looking for improved performance in your electronic devices or seeking a dependable solution for your timing needs, the FY1200112 offers unparalleled value, benefits, and advantages that will exceed your expectations. Trust Diodes Incorporated to provide you with the best crystal oscillators on the market.

Feature Benefit Bullets

Crystal or Resonator Type: PARALLEL - FUNDAMENTAL

This type of crystal oscillator provides reliable and stable frequency output, making it suitable for applications requiring precise timing.

Nominal Operating Frequency: 12 MHz

Ideal for applications where a 12 MHz frequency is needed for proper functionality.

Aging: 3 PPM/FIRST YEAR

Low aging rate ensures long-term stability and accuracy of the oscillator's frequency output.

Mounting Feature: SURFACE MOUNT

Surface mount technology allows for easy and secure installation on PCBs, saving space and providing efficient assembly.

Drive Level: 10 uW

Low power consumption makes this crystal oscillator energy-efficient and suitable for battery-powered devices.

Physical Dimension: L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)

Compact size allows for versatile placement in various electronic devices without taking up much space.

Technical Specifications

Crystal Oscillators FY1200112 attributes and parameters. Explore more Crystal Oscillators devices from Diodes Incorporated

Specs

Additional Features:

AT-CUT; TR

Crystal or Resonator Type:

Drive Level:

10 uW

Mounting Feature:

Nominal Operating Frequency:

12 MHz

Physical Dimension:

L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)

Trade Compliance

FY1200112 Crystals & Resonators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.60.00.50

SB

8541.60.00.25

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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