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FY1200084

Diodes Incorporated

FY1200084 by Diodes Incorporated

Diodes Inc. FY1200084 is a 12MHz crystal oscillator with aging of 3PPM/yr. It features surface mounting and drive level of 10uW. Ideal for applications requiring precise timing in compact spaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 16,377 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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16,377

-

-

-

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 746 parts In-Stock

1+ parts

$1.010

100+ parts

-

1k+ parts

-

10k+ parts

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746

$1.010

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-

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AZTECH Wire

Italy . 431 parts In-Stock

1+ parts

$11.980

100+ parts

-

1k+ parts

-

10k+ parts

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431

$11.980

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,000

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Overview

Unleash the power of precision and reliability with the FY1200084 crystal oscillator from Diodes Incorporated. Crafted with superior quality and expertise, this parallel-fundamental type resonator operates at a nominal frequency of 12 MHz, ensuring optimal performance for your applications. Experience minimal aging of just 3 PPM in the first year, along with the convenience of surface mount installation. With a drive level of 10 uW and compact dimensions of L5.0XB3.2XH0.9 (mm), this crystal oscillator offers unmatched value and efficiency for all your electronic needs. Elevate your projects with the FY1200084 and let Diodes Incorporated drive innovation for you.

Feature Benefit Bullets

Crystal or Resonator Type: PARALLEL - FUNDAMENTAL

This type of crystal oscillator provides a stable and accurate frequency output, making it suitable for high precision applications.

Nominal Operating Frequency: 12 MHz

The 12 MHz frequency is commonly used in many electronic devices, offering compatibility with a wide range of systems.

Aging: 3 PPM/FIRST YEAR

With low aging rate of 3 PPM per year, this crystal oscillator maintains frequency stability over time, ensuring reliable performance.

Mounting Feature: SURFACE MOUNT

Surface mounting feature simplifies installation and allows for space-saving design in compact electronic devices.

Drive Level: 10 uW

The low drive level of 10 microWatts helps in reducing power consumption and making the product energy efficient.

Physical Dimension: L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)

The compact size of 5.0x3.2x0.9 mm or 0.197x0.126x0.035 inch allows for easy integration in small electronic devices without compromising on performance.

Technical Specifications

Crystal Oscillators FY1200084 attributes and parameters. Explore more Crystal Oscillators devices from Diodes Incorporated

Specs

Additional Features:

AT-CUT; TR

Crystal or Resonator Type:

Drive Level:

10 uW

Mounting Feature:

Nominal Operating Frequency:

12 MHz

Physical Dimension:

L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)

Trade Compliance

FY1200084 Crystals & Resonators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.60.00.50

SB

8541.60.00.25

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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