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DRDP006W-7

Diodes Incorporated

DRDP006W-7 by Diodes Incorporated

DRDP006W-7 by Diodes Inc. is a PNP BJT transistor with hFE of 100, VCE of 60V, and IC of 0.6A. It's used for switching applications in surface-mount designs due to its small outline package and high transition frequency of 200MHz. Operating up to 150°C, it's ideal for compact electronic devices requiring efficient signal amplification.

Median Price

$0.224

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,579 parts In-Stock

1+ parts

$0.370

100+ parts

$0.172

1k+ parts

$0.108

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2,579

$0.370

$0.172

$0.108

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Verical

USA . 87,000 parts In-Stock

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-

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$0.079

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$0.079

Avnet

USA . 3,000 parts In-Stock

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3,000

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NAC Semi

USA . 3,000 parts In-Stock

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3,000

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Distributors (Availability)

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Ampacity Inc.

Singapore . 30,777 parts In-Stock

1+ parts

$0.067

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30,777

$0.067

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Native Components

USA . 223 parts In-Stock

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$1.130

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223

$1.130

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Northwest PG Solutions

USA . 541 parts In-Stock

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$1.243

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541

$1.243

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Kepictronics

USA . 33,542 parts In-Stock

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33,542

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iodParts Technologies Inc.

India . 12,000 parts In-Stock

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12,000

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Lixinc

USA . 12,000 parts In-Stock

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12,000

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Perfect Parts

USA . 8,659 parts In-Stock

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8,659

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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3,790

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Eastek

USA . 3,000 parts In-Stock

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3,000

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Overview

Enhance your electronic projects with the DRDP006W-7 by Diodes Incorporated, a high-quality Small Signal Bipolar Junction Transistor perfect for switching applications. Designed with precision and expertise by a renowned manufacturer, this PNP transistor offers reliable performance and durability. Whether you're a hobbyist or a professional, this product's excellent DC current gain, low operating temperature, and versatile package style make it a valuable addition to your toolkit. Elevate your projects with the DRDP006W-7 and experience the benefits of superior quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/epoxy material makes the package lightweight and durable, ideal for small signal applications.

Polarity or Channel Type: PNP

PNP configuration allows for easy integration with other PNP transistors in a circuit.

Configuration: SINGLE

Single configuration simplifies circuit design and troubleshooting.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Surface mount capability saves space and makes installation easier in compact electronic devices.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient packing and placement on circuit boards.

Terminal Form: GULL WING

Gull wing terminals provide secure connection and ease of soldering during assembly.

No. of Terminals: 6

With 6 terminals, this transistor offers versatility in circuit connections.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and is suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 100

High minimum DC current gain ensures consistent and stable amplification in a circuit.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperature environments.

Maximum Collector-Emitter Voltage: 60 V

High maximum collector-emitter voltage capacity allows for a wide range of voltage applications.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability in electronic circuits.

Maximum Collector Current (IC): 0.6 A

With a maximum collector current of 0.6 A, this transistor is suitable for low to medium power applications.

Terminal Finish: MATTE TIN

Matte tin finish provides excellent solderability and corrosion resistance.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit connections.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for up to 30 seconds, ensuring proper soldering during assembly.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260°C allows for reliable soldering and assembly processes.

Nominal Transition Frequency (fT): 200 MHz

High nominal transition frequency of 200 MHz enables fast switching speeds in electronic circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DRDP006W-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DRDP006W-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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