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DMT6017LDV-7

Diodes Incorporated

DMT6017LDV-7 by Diodes Incorporated

Small Signal Field-Effect Transistors; Terminal Finish: MATTE TIN; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;

Median Price

$0.828

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 899 parts In-Stock

1+ parts

$1.400

100+ parts

$0.595

1k+ parts

$0.404

10k+ parts

$0.338

899

$1.400

$0.595

$0.404

$0.338

DigiKey

USA . 8 parts In-Stock

1+ parts

$1.400

100+ parts

$0.583

1k+ parts

$0.413

10k+ parts

-

8

$1.400

$0.583

$0.413

-

Arrow

USA . 37,422 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.256

10k+ parts

-

37,422

-

-

$0.256

-

Verical

USA . 37,422 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.256

10k+ parts

-

37,422

-

-

$0.256

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 16,286 parts In-Stock

1+ parts

$0.520

100+ parts

-

1k+ parts

-

10k+ parts

-

16,286

$0.520

-

-

-

Corohmni

South Africa . 1,117 parts In-Stock

1+ parts

$1.406

100+ parts

-

1k+ parts

-

10k+ parts

-

1,117

$1.406

-

-

-

Argo Parts USA

USA . 3,496 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,496

-

-

-

-

Continental Prestige Electronics

USA . 2,422 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,422

-

-

-

-

Robosynatics

Brazil . 658 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

658

-

-

-

-

Lucentia Tech

USA . 658 parts In-Stock

1+ parts

-

100+ parts

$0.603

1k+ parts

$0.590

10k+ parts

$0.590

658

-

$0.603

$0.590

$0.590

Aranea Global

USA . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

500

-

-

-

-

Technical Specifications

Small Signal Field Effect Transistors (FET) DMT6017LDV-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Peak Reflow Temperature (C):

260

Terminal Finish:

MATTE TIN

Trade Compliance

DMT6017LDV-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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