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DMT12H065LFDF-7

Diodes Incorporated

DMT12H065LFDF-7 by Diodes Incorporated

Diodes Inc. DMT12H065LFDF-7 is a N-channel FET with 115V DS breakdown voltage, 0.065 ohm RDS(on), and 4.3A ID. Ideal for switching applications, it operates in enhancement mode with max power dissipation of 1.8W at 150°C.

Median Price

$1.330

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,485 parts In-Stock

1+ parts

$1.330

100+ parts

$0.543

1k+ parts

$0.389

10k+ parts

$0.310

2,485

$1.330

$0.543

$0.389

$0.310

DigiKey

USA . 2,889 parts In-Stock

1+ parts

$1.370

100+ parts

$0.570

1k+ parts

$0.406

10k+ parts

$0.311

2,889

$1.370

$0.570

$0.406

$0.311

Verical

USA . 249,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.311

249,000

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$0.311

Avnet

USA . 3,000 parts In-Stock

1+ parts

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10k+ parts

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3,000

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-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

$0.448

12,000

-

-

-

$0.448

Bristol Electronics

USA . 2,110 parts In-Stock

1+ parts

-

100+ parts

$0.323

1k+ parts

$0.241

10k+ parts

$0.224

2,110

-

$0.323

$0.241

$0.224

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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5,000

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Eastek

USA . 3,000 parts In-Stock

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3,000

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Native Components

USA . 367 parts In-Stock

1+ parts

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367

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Northwest PG Solutions

USA . 358 parts In-Stock

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358

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Overview

Discover the power of the DMT12H065LFDF-7 by Diodes Incorporated, a top-tier manufacturer of high-quality electronic components. This small signal Field Effect Transistor (FET) offers unmatched performance in switching applications with its N-channel configuration and built-in diode. With a minimum DS breakdown voltage of 115V and maximum drain current of 4.3A, this FET delivers reliable operation even in demanding environments. Trust Diodes Incorporated to provide cutting-edge technology that exceeds expectations. Elevate your projects with the DMT12H065LFDF-7 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the transistor lightweight and durable, ideal for portable or small electronic devices.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have higher mobility and conductivity compared to P-channel FETs, making them suitable for high-performance applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and protects the transistor from reverse voltage spikes, enhancing reliability.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast switching speeds and low power consumption.

Surface Mount: YES

The surface-mount capability allows for easy PCB assembly and space-saving design.

Minimum DS Breakdown Voltage: 115 V

The high breakdown voltage ensures reliable operation, especially in high-voltage applications.

Package Shape: SQUARE

The square shape allows for efficient use of board space and easy placement on the PCB.

Terminal Form: NO LEAD

The no-lead terminals reduce parasitic resistance and inductance, improving overall performance.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer easier control and higher efficiency compared to depletion mode FETs.

No. of Terminals: 6

The 6 terminals provide flexibility in circuit connections and configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for high-density mounting.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers low leakage current and high efficiency, ideal for low-power applications.

Maximum Power Dissipation Ambient: 1.8 W

The transistor can handle high power dissipation levels, ensuring reliable operation under heavy loads.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for operation in environments with elevated temperatures.

Transistor Element Material: SILICON

Silicon transistors offer high thermal conductivity and reliability, making them suitable for a wide range of applications.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature allows for operation in cold environments.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel palladium gold finish provides excellent corrosion resistance and ensures long-term reliability.

Maximum Drain Current (ID): 4.3 A

The high maximum drain current rating allows for handling high current loads without overheating.

Maximum Drain-Source On Resistance: 0.065 ohm

The low on-resistance minimizes power loss and heat generation, improving overall efficiency.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit design and allows for easy connections.

Case Connection: DRAIN

The drain case connection simplifies circuit design and improves thermal management.

Maximum Time At Peak Reflow Temperature (s): 30

The short reflow time allows for quick and efficient soldering during assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures reliable solder joints and prevents solder defects.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMT12H065LFDF-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

115 V

Maximum Drain Current (ID):

4.3 A

Maximum Drain-Source On Resistance:

.065 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

1.8 W

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMT12H065LFDF-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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