Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Diodes Inc. DMT12H065LFDF-7 is a N-channel FET with 115V DS breakdown voltage, 0.065 ohm RDS(on), and 4.3A ID. Ideal for switching applications, it operates in enhancement mode with max power dissipation of 1.8W at 150°C.
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The plastic/epoxy material makes the transistor lightweight and durable, ideal for portable or small electronic devices.
N-channel FETs typically have higher mobility and conductivity compared to P-channel FETs, making them suitable for high-performance applications.
The built-in diode simplifies circuit design and protects the transistor from reverse voltage spikes, enhancing reliability.
Designed for switching applications, this transistor offers fast switching speeds and low power consumption.
The surface-mount capability allows for easy PCB assembly and space-saving design.
The high breakdown voltage ensures reliable operation, especially in high-voltage applications.
The square shape allows for efficient use of board space and easy placement on the PCB.
The no-lead terminals reduce parasitic resistance and inductance, improving overall performance.
Enhancement mode FETs offer easier control and higher efficiency compared to depletion mode FETs.
The 6 terminals provide flexibility in circuit connections and configurations.
The small outline package style saves space on the PCB and allows for high-density mounting.
Metal-oxide semiconductor technology offers low leakage current and high efficiency, ideal for low-power applications.
The transistor can handle high power dissipation levels, ensuring reliable operation under heavy loads.
The high maximum operating temperature allows for operation in environments with elevated temperatures.
Silicon transistors offer high thermal conductivity and reliability, making them suitable for a wide range of applications.
The low minimum operating temperature allows for operation in cold environments.
The nickel palladium gold finish provides excellent corrosion resistance and ensures long-term reliability.
The high maximum drain current rating allows for handling high current loads without overheating.
The low on-resistance minimizes power loss and heat generation, improving overall efficiency.
The dual terminal position provides flexibility in circuit design and allows for easy connections.
The drain case connection simplifies circuit design and improves thermal management.
The short reflow time allows for quick and efficient soldering during assembly.
The high peak reflow temperature ensures reliable solder joints and prevents solder defects.
Small Signal Field Effect Transistors (FET) DMT12H065LFDF-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
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Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation Ambient:
Surface Mount:
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Transistor Application:
Transistor Element Material:
DMT12H065LFDF-7 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.95
SB
8541.29.00.80
Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.
Chairman and CEO
Keh-Shew Lu
CFO
Brett R. Whitmire
Lead Director
Angie Chen Button
Fab 1
Fabrication
Fab Initiation
1987
China
Shanghai
Wafer Capacity
40,000
Zizhu Fab 1
2013
18,500
G Fab
2008
UK
Greenock
8,000
Keelung Fab
1990
Taiwan
Keelung
58,000
Wuxi Fab
2004
Wuxi
190,000
Shanghai Fab
1993
110,000
1970
22,000
Hsinchu Fab
1998
Hsinchu
38,000
Fab 2
2003
20,000
SPFAB
1995
USA
South Portland
17,000
N/A
1982
Oldham
4,000
1N4148
Wuxi Xuyang Electronic
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM317T
Motorola
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; No. of Outputs: 1; Package Equivalence Code: SIP3,.1TB;
1N4148WS
Onsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
CRCW040210K0FKED
Vishay Intertechnology
Vishay Intertechnology's CRCW040210K0FKED is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.063 W power dissipation. Ideal for surface mount applications in electronics due to its compact SMT package style and high operating temperature range of -55 to 155 °C.
SS14
Meritek Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
ERJ2RKF1002X
Panasonic
Panasonic's ERJ2RKF1002X is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 compliance and operating temperature range of -55 to 155 °C.
LM358DR2G
LM358DR2G by Onsemi is a dual operational amplifier with 7000uV max input offset voltage and 70dB nominal CMRR. Ideal for applications requiring low bias current such as sensor interfaces, signal conditioning circuits, and audio amplifiers. Package style: Small Outline, Technology: Bipolar, Unity Gain Bandwidth: 1000 kHz.
Vishay Sprague
Frontier Electronics
USB2514BI-AEZG
Microchip Technology
USB2514BI-AEZG by Microchip is a BUS CONTROLLER IC with 36 terminals, operating at 3.3V, supporting I2C, SMBUS, and USB buses. It has a clock frequency of up to 24MHz and can withstand industrial temperatures from -40°C to 85°C. This chip carrier package is surface mountable and suitable for various applications requiring USB connectivity.
SMBJ18CA
First Components International
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Polarity: BIDIRECTIONAL; Maximum Repetitive Peak Reverse Voltage: 18 V;
Micro Commercial Components
LL4148
Formosa Microsemi
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Infinex
C0603C104K5RACTU
KEMET Corporation
KEMET C0603C104K5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V URdc. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications requiring compact size and reliable performance in various electronic circuits.
2N7002
Supertex
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Maximum Feedback Capacitance (Crss): 5 pF;
Dc Components
STM32H743BIT6
STMicroelectronics
STM32H743BIT6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, 208 terminals, and 1085440 bytes of RAM. It features 2 DAC channels, 32 ADC channels, and operates at a max clock frequency of 48 MHz. Ideal for industrial applications requiring high-speed processing and extensive peripheral connectivity.
BSS138K
BSS138K by Onsemi is a N-CHANNEL FET with 50V DS breakdown voltage and 0.22A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating from -55 to 150 °C, this MOSFET has 2.5 ohm max drain-source resistance and matte tin terminal finish.
SI4816BDY-T1-E3
SI4816BDY-T1-E3 by Vishay Intertechnology is a N-CHANNEL FET with 2 SERIES CONNECTED elements. It has a Max Drain Current of 5.8A and Min DS Breakdown Voltage of 30V. Ideal for applications requiring high drain current in small outline packages, operating b/w -55 to 150°C.
2N7002PW
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .31 W; Transistor Element Material: SILICON; Peak Reflow Temperature (C): 260;
SI2301CDS-T1-E3
Vishay Intertechnology's SI2301CDS-T1-E3 is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 3.1A Drain Current, 0.112 ohm On Resistance, and operates in ENHANCEMENT MODE. With a max power dissipation of 1.6W and operating temperature up to 150°C, it is suitable for various electronic designs requiring high performance in compact spaces.
FDS9431A
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Transistor Element Material: SILICON; Terminal Finish: MATTE TIN;
ZXM61P03FTA
Diodes Incorporated
ZXM61P03FTA by Diodes Inc. is a P-CHANNEL FET with 30V DS breakdown voltage, 1.1A max drain current, and 0.35 ohm max on resistance. It is used for switching applications in small outline packages, featuring MOSFET technology and operating up to 150°C.
BSS138WT106
ROHM
ROHM BSS138WT106 is a N-CHANNEL FET with 60V DS breakdown voltage, 0.31A ID, and 3 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with built-in diode. With Gull Wing terminals and small outline package, it can handle up to 0.3W power dissipation.
2N7002-7-F
Diodes Inc. 2N7002-7-F is a N-channel FET with 60V DS breakdown voltage, 0.115A max drain current, and 13.5 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features Gull Wing terminals, small outline package style, and operates up to 150°C.
Nte Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain Current (ID): .115 A; No. of Terminals: 3;
NUD3124DMT1G
NUD3124DMT1G by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor. Operating in enhancement mode, it has a max ID of 0.15A and RDS(on) of 1.4 ohm. Ideal for switching applications due to its small outline package style and temp rating of 150°C.
2N7000
Kec
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: BOTTOM; Qualification: Not Qualified; Transistor Application: SWITCHING;
2N7002K
Weitron Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Form: GULL WING; Maximum Drain Current (ID): .115 A;
BSS123LT3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Position: DUAL; Maximum Drain Current (ID): .17 A;
2N7002W
Onsemi's 2N7002W is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Package includes GULL WING terminals in a RECTANGULAR shape for surface mount assembly at temperatures up to 150°C.
FDV305N
FDV305N by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 0.9A Drain Current, and 0.22ohm On Resistance. Ideal for SWITCHING applications in small outline packages with 3 terminals and operating up to 150°C.
FDS9435A
The Onsemi FDS9435A is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 5.3A Drain Current, 0.05 ohm On Resistance, and operates in ENHANCEMENT MODE. With a max power dissipation of 2.5W and operating temperature range from -55 to 175 °C, it is suitable for various electronic designs requiring high performance in a small outline package.
BSS123-G
Small Signal Field-Effect Transistors; Terminal Finish: Matte Tin (Sn) - annealed; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
Inter F E T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; JEDEC-95 Code: TO-226AA; JESD-30 Code: O-PBCY-T3;
NTJD4401NT1G
NTJD4401NT1G by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor. It operates in enhancement mode for switching applications. With a max drain current of 0.63A and on resistance of 0.375 ohm, it's ideal for small outline packages in high-temp environments up to 150°C.
2N7002P,235
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Reference Standard: AEC-Q101; IEC-60134; Maximum Operating Temperature: 150 Cel; Maximum Drain-Source On Resistance: 1.6 ohm;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
DMT10H009LCG-13
Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): 260; JESD-609 Code: e4; Terminal Finish: NICKEL PALLADIUM GOLD; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30;
DMT10H009LCG-7
Small Signal Field-Effect Transistors; Terminal Finish: NICKEL PALLADIUM GOLD; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; JESD-609 Code: e4;
DMT10H015LCG-13
Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e4; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: NICKEL PALLADIUM GOLD;
DMT10H015LCG-7
Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): 260; Terminal Finish: NICKEL PALLADIUM GOLD; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e4; Moisture Sensitivity Level (MSL): 1;
DMT10H032LDV-13
Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN;
DMT10H032LDV-7
Small Signal Field-Effect Transistors; Terminal Finish: MATTE TIN; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260;
DMT10H032LFDF-13
Small Signal Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: NICKEL PALLADIUM GOLD; Peak Reflow Temperature (C): 260; JESD-609 Code: e4; Moisture Sensitivity Level (MSL): 1;
DMT10H032LFDF-7
Small Signal Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: NICKEL PALLADIUM GOLD; JESD-609 Code: e4; Peak Reflow Temperature (C): 260;
DMT10H052LFDF-13
Small Signal Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: NICKEL PALLADIUM GOLD; JESD-609 Code: e4; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260;
DMT10H052LFDF-7
DMT12H065LFDF-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation Ambient: 1.8 W; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel;
DMT12H090LFDF4-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: SQUARE; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE;
DMT12H090LFDF4-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 115 V; Maximum Power Dissipation Ambient: 1.6 W; Package Shape: SQUARE;
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