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DDTB113ZC-7-F

Diodes Incorporated

DDTB113ZC-7-F by Diodes Incorporated

DDTB113ZC-7-F by Diodes Inc. is a PNP BJT with built-in resistor, 0.2W power dissipation, and 40V collector-emitter voltage. Ideal for small outline applications requiring a max current of 0.5A, it operates up to 150°C with a transition frequency of 200MHz in surface-mount designs.

Median Price

$0.078

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 7,782 parts In-Stock

1+ parts

$0.220

100+ parts

$0.083

1k+ parts

$0.049

10k+ parts

$0.032

7,782

$0.220

$0.083

$0.049

$0.032

DigiKey

USA . 6,008 parts In-Stock

1+ parts

$0.220

100+ parts

$0.082

1k+ parts

$0.053

10k+ parts

$0.037

6,008

$0.220

$0.082

$0.053

$0.037

Newark

USA . 775 parts In-Stock

1+ parts

$0.293

100+ parts

$0.118

1k+ parts

$0.081

10k+ parts

-

775

$0.293

$0.118

$0.081

-

Arrow

USA . 2,668 parts In-Stock

1+ parts

-

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-

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$0.023

2,668

-

-

-

$0.023

Verical

USA . 2,668 parts In-Stock

1+ parts

-

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-

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$0.023

2,668

-

-

-

$0.023

Farnell

UK . 1,900 parts In-Stock

1+ parts

-

100+ parts

$0.078

1k+ parts

$0.039

10k+ parts

$0.033

1,900

-

$0.078

$0.039

$0.033

Element14

Singapore . 1,900 parts In-Stock

1+ parts

-

100+ parts

$0.070

1k+ parts

$0.038

10k+ parts

$0.033

1,900

-

$0.070

$0.038

$0.033

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Flip Electronics

USA . 200,000 parts In-Stock

1+ parts

-

100+ parts

-

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200,000

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-

-

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NAC Semi

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.043

6,000

-

-

-

$0.043

ComSIT Distribution GmbH

Germany . 173 parts In-Stock

1+ parts

-

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173

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Distributors (Availability)

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Corohmni

South Africa . 581 parts In-Stock

1+ parts

$0.049

100+ parts

-

1k+ parts

-

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581

$0.049

-

-

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Native Components

USA . 862 parts In-Stock

1+ parts

$0.134

100+ parts

-

1k+ parts

-

10k+ parts

$0.129

862

$0.134

-

-

$0.129

Northwest PG Solutions

USA . 1,027 parts In-Stock

1+ parts

$0.148

100+ parts

-

1k+ parts

-

10k+ parts

$0.130

1,027

$0.148

-

-

$0.130

Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$1.582

100+ parts

$1.440

1k+ parts

$1.297

10k+ parts

-

2,000

$1.582

$1.440

$1.297

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Lixinc

USA . 11,527 parts In-Stock

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11,527

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Perfect Parts

USA . 11,041 parts In-Stock

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Eastek

USA . 6,000 parts In-Stock

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6,000

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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3,790

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Continental Prestige Electronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.065

1k+ parts

$0.045

10k+ parts

$0.029

3,000

-

$0.065

$0.045

$0.029

Kepictronics

USA . 2,048 parts In-Stock

1+ parts

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2,048

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Futuretech Components

Singapore . 1,708 parts In-Stock

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1,708

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Overview

Elevate your electronics projects with the DDTB113ZC-7-F by Diodes Incorporated, a high-quality Small Signal Bipolar Junction Transistor (BJT) that delivers reliable performance. With a PNP polarity and built-in resistor configuration, this surface-mount transistor offers versatility for a wide range of applications. The compact design and maximum power dissipation of 0.2W make it ideal for space-constrained projects. Trust in Diodes Incorporated's reputation for excellence and innovation, and experience the value and benefits that the DDTB113ZC-7-F brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a long lifespan.

Polarity or Channel Type: PNP

Suitable for various applications where PNP transistors are required.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design by including a built-in resistor, reducing the need for additional components.

Maximum Power Dissipation: 0.2 W

Efficiently handles power dissipation, preventing overheating and ensuring reliable operation.

Maximum Operating Temperature: 150 °C

Can operate effectively in a wide range of temperature conditions, suitable for various environments.

Transistor Element Material: SILICON

Offers high performance and reliability due to the use of silicon material.

Nominal Transition Frequency: 200 MHz

Provides high frequency capabilities, suitable for applications requiring fast signal switching.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DDTB113ZC-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 10

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Minimum DC Current Gain (hFE):

56

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DDTB113ZC-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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