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D8V0X1B2LPQ-7B

Diodes Incorporated

D8V0X1B2LPQ-7B by Diodes Incorporated

D8V0X1B2LPQ-7B by Diodes Inc. is a single transient suppression device with 12V breakdown voltage, 1uA reverse current, and 21V clamping voltage. Ideal for protecting sensitive electronics from voltage spikes in applications like consumer electronics and industrial equipment.

Median Price

$0.292

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 16,570 parts In-Stock

1+ parts

$0.420

100+ parts

$0.149

1k+ parts

$0.103

10k+ parts

$0.090

16,570

$0.420

$0.149

$0.103

$0.090

Mouser Electronics

USA . 9,995 parts In-Stock

1+ parts

$0.420

100+ parts

$0.133

1k+ parts

$0.093

10k+ parts

$0.082

9,995

$0.420

$0.133

$0.093

$0.082

Verical

USA . 470,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.066

470,000

-

-

-

$0.066

RS (Exports)

UK . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.165

10,000

-

-

-

$0.165

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 629 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

629

-

-

-

-

Northwest PG Solutions

USA . 257 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

257

-

-

-

-

Overview

Discover the superior protection and reliability of the D8V0X1B2LPQ-7B by Diodes Incorporated, a leading manufacturer in transient suppression devices. Ideal for a wide range of applications, this chip carrier device offers a nominal breakdown voltage of 12V and a maximum clamping voltage of 21V, ensuring your electronics are safeguarded against voltage spikes. With top-notch quality, advanced technology, and exceptional performance, this bidirectional trans voltage suppressor diode provides unmatched value and peace of mind to customers looking for robust protection. Trust Diodes Incorporated for all your transient suppression needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material ensures durability and protection for the device, making it suitable for various applications.

Nominal Breakdown Voltage: 12 V

A 12V breakdown voltage provides effective protection against voltage spikes and transients, ensuring the safety of connected devices.

Maximum Reverse Current: 1 uA

Low maximum reverse current ensures minimal power loss and efficient operation of the transient suppression device.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the device to perform reliably in challenging environmental conditions.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature enables the device to function effectively even in extremely cold environments.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of a Trans Voltage Suppressor diode ensures fast and effective transient voltage protection for connected equipment.

Technology: AVALANCHE

Avalanche technology allows for quick response to transient events, providing superior protection to sensitive electronics.

Maximum Clamping Voltage: 21 V

A maximum clamping voltage of 21V ensures that the voltage across the device and connected equipment does not exceed a safe threshold during transient events.

Technical Specifications

Transient Suppression Devices D8V0X1B2LPQ-7B attributes and parameters. Explore more Transient Suppression Devices devices from Diodes Incorporated

Specs

Maximum Breakdown Voltage:

14.5 V

Minimum Breakdown Voltage:

9.5 V

Nominal Breakdown Voltage:

12 V

Maximum Clamping Voltage:

21 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e4

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

.35 W

Reference Standard:

IEC-61000-4-2; MIL-STD-202

Maximum Repetitive Peak Reverse Voltage:

8 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

8 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Trade Compliance

D8V0X1B2LPQ-7B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

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