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D8V0L1B2LP3-7

Diodes Incorporated

D8V0L1B2LP3-7 by Diodes Incorporated

D8V0L1B2LP3-7 by Diodes Inc. is a single transient suppression device with a max power dissipation of 66W and breakdown voltage of 10.25V. It is used for surge protection in applications requiring bidirectional polarity, such as IEC-61000-4-2 compliant systems.

Median Price

$0.033

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 26,384 parts In-Stock

1+ parts

$0.340

100+ parts

$0.097

1k+ parts

$0.059

10k+ parts

$0.032

26,384

$0.340

$0.097

$0.059

$0.032

Verical

USA . 2,790,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.033

2,790,000

-

-

-

$0.033

DigiKey

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.033

10,000

-

-

-

$0.033

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 550,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.054

550,000

-

-

-

$0.054

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 114 parts In-Stock

1+ parts

$0.010

100+ parts

-

1k+ parts

-

10k+ parts

-

114

$0.010

-

-

-

Advanced Electronics

New Zealand . 870 parts In-Stock

1+ parts

$0.221

100+ parts

$0.201

1k+ parts

$0.181

10k+ parts

-

870

$0.221

$0.201

$0.181

-

Component Stockers USA

USA . 2,415,719 parts In-Stock

1+ parts

$0.330

100+ parts

$0.090

1k+ parts

$0.060

10k+ parts

$0.030

2,415,719

$0.330

$0.090

$0.060

$0.030

iodParts Technologies Inc.

India . 32,020 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.044

32,020

-

-

-

$0.044

Northwest PG Solutions

USA . 1,148 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,148

-

-

-

-

Native Components

USA . 841 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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841

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-

-

-

Overview

Experience superior protection against transient voltage spikes with the D8V0L1B2LP3-7 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-notch quality and reliability in their transient suppression devices. This single-configured chip carrier is designed for easy surface mounting, making it ideal for a wide range of applications. Ensure your electronics are safeguarded with this high-performance diode, offering a nominal breakdown voltage of 10.25V and maximum clamping voltage of 16.5V. Trust Diodes Incorporated to provide you with exceptional value and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package durable and resistant to external factors, ensuring a longer lifespan.

Maximum Non Repetitive Peak Reverse Power Dissipation: 66 W

With a high power dissipation rating, this product can handle sudden spikes in voltage without getting damaged, providing reliable protection.

Nominal Breakdown Voltage: 10.25 V

The nominal breakdown voltage ensures that the device activates at the specified voltage level, effectively diverting excess voltage away from the circuit.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows the device to function in various environmental conditions without overheating, ensuring consistent performance.

Reverse Test Voltage: 8 V

The reverse test voltage indicates the voltage at which the device starts conducting, providing an extra layer of protection against reverse currents.

Technical Specifications

Transient Suppression Devices D8V0L1B2LP3-7 attributes and parameters. Explore more Transient Suppression Devices devices from Diodes Incorporated

Specs

Maximum Breakdown Voltage:

12 V

Minimum Breakdown Voltage:

8.5 V

Nominal Breakdown Voltage:

10.25 V

Maximum Clamping Voltage:

16.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

66 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Reference Standard:

IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

8 V

Maximum Reverse Current:

.05 uA

Reverse Test Voltage:

8 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

D8V0L1B2LP3-7 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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