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D8V0L1B2LP-7B

Diodes Incorporated

D8V0L1B2LP-7B by Diodes Incorporated

D8V0L1B2LP-7B by Diodes Inc. is a single transient suppression device with 8V max repetitive peak reverse voltage and 12V max breakdown voltage. It operates in temperatures ranging from -65°C to 150°C, making it suitable for applications requiring bidirectional protection against voltage transients. This chip carrier package diode is designed using avalanche technology and complies with IEC standards for surge protection.

Median Price

$0.109

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 9,690 parts In-Stock

1+ parts

$0.180

100+ parts

$0.052

1k+ parts

$0.044

10k+ parts

$0.034

9,690

$0.180

$0.052

$0.044

$0.034

DigiKey

USA . 3,873 parts In-Stock

1+ parts

$0.180

100+ parts

$0.052

1k+ parts

$0.044

10k+ parts

$0.034

3,873

$0.180

$0.052

$0.044

$0.034

Verical

USA . 1,090,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.031

1,090,000

-

-

-

$0.031

Arrow

USA . 340,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.038

340,000

-

-

-

$0.038

Avnet

USA . 80,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

80,000

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 380,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.050

380,000

-

-

-

$0.050

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 246 parts In-Stock

1+ parts

$0.230

100+ parts

-

1k+ parts

-

10k+ parts

$0.221

246

$0.230

-

-

$0.221

Northwest PG Solutions

USA . 1,502 parts In-Stock

1+ parts

$0.253

100+ parts

-

1k+ parts

-

10k+ parts

$0.223

1,502

$0.253

-

-

$0.223

Eastek

USA . 90,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.053

90,000

-

-

-

$0.053

Overview

Unleash the power of protection with the D8V0L1B2LP-7B by Diodes Incorporated. Crafted with precision and expertise, this transient suppression device is designed to safeguard your electronics from voltage spikes and surges. Ideal for a wide range of applications, this diode offers unparalleled reliability and efficiency. Trust in the quality and innovation that Diodes Incorporated is known for, and experience the peace of mind that comes with knowing your devices are safe and secure. Upgrade to the D8V0L1B2LP-7B today and protect your investments with confidence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the device, ensuring long-term reliability and performance.

Surface Mount: YES

Allows for easy and efficient installation on a printed circuit board, saving space and simplifying assembly.

Maximum Non Repetitive Peak Reverse Power Dissipation: 68 W

Can handle high surge currents and provide effective protection against voltage spikes.

Minimum Breakdown Voltage: 8.5 V

Provides a high level of protection by clamping voltages above this threshold, safeguarding sensitive components.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient voltage suppression, ensuring efficient and reliable protection against voltage spikes.

Terminal Form: NO LEAD

Eliminates the need for lead-free soldering, improving environmental friendliness and simplifying assembly processes.

Technical Specifications

Transient Suppression Devices D8V0L1B2LP-7B attributes and parameters. Explore more Transient Suppression Devices devices from Diodes Incorporated

Specs

Maximum Breakdown Voltage:

12 V

Minimum Breakdown Voltage:

8.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

68 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Reference Standard:

IEC-61000-4-2; IEC-61000-4-5

Maximum Repetitive Peak Reverse Voltage:

8 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

D8V0L1B2LP-7B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

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