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D12V0H1U2LP-7B

Diodes Incorporated

D12V0H1U2LP-7B by Diodes Incorporated

D12V0H1U2LP-7B by Diodes Inc. is a single, surface mount transient suppression device with a max non-repetitive peak reverse power dissipation of 300W. It has a breakdown voltage of 14.525V and is commonly used for ESD protection in various electronic applications.

Median Price

$0.089

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 110,000 parts In-Stock

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$0.031

110,000

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$0.031

Farnell

UK . 8,385 parts In-Stock

1+ parts

-

100+ parts

$0.093

1k+ parts

$0.046

10k+ parts

$0.045

8,385

-

$0.093

$0.046

$0.045

Element14

Singapore . 8,385 parts In-Stock

1+ parts

-

100+ parts

$0.089

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$0.049

10k+ parts

$0.048

8,385

-

$0.089

$0.049

$0.048

Distributors (In-Stock)

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.062

100+ parts

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10

$0.062

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NAC Semi

USA . 10,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 9,948 parts In-Stock

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Dan-Mar Components

USA . 9,948 parts In-Stock

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9,948

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Bristol Electronics

USA . 8,455 parts In-Stock

1+ parts

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100+ parts

$0.094

1k+ parts

$0.056

10k+ parts

$0.037

8,455

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$0.094

$0.056

$0.037

Prism Electronics

USA . 186 parts In-Stock

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186

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 48,877 parts In-Stock

1+ parts

$0.026

100+ parts

$0.025

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$0.025

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48,877

$0.026

$0.025

$0.025

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Ampacity Inc.

Singapore . 48,666 parts In-Stock

1+ parts

$0.026

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48,666

$0.026

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Continental Prestige Electronics

USA . 5,615 parts In-Stock

1+ parts

$0.060

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$0.059

5,615

$0.060

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-

$0.059

Argo Parts USA

USA . 3,169 parts In-Stock

1+ parts

$0.060

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$0.058

3,169

$0.060

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$0.058

Corohmni

South Africa . 752 parts In-Stock

1+ parts

$0.071

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752

$0.071

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Advanced Electronics

New Zealand . 20 parts In-Stock

1+ parts

$0.087

100+ parts

$0.079

1k+ parts

$0.071

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20

$0.087

$0.079

$0.071

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Aztec Data Supply Inc.

USA . 2,683 parts In-Stock

1+ parts

$0.120

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2,683

$0.120

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iodParts Technologies Inc.

India . 15 parts In-Stock

1+ parts

$0.330

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15

$0.330

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Eastek

USA . 10,000 parts In-Stock

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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8,000

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Overview

Discover the D12V0H1U2LP-7B by Diodes Incorporated, a high-quality transient suppression device designed to provide robust protection against voltage spikes. As a trusted manufacturer in the industry, Diodes Incorporated ensures reliable and durable products. This chip carrier-style device offers numerous benefits, including a maximum non-repetitive peak reverse power dissipation of 300W, nominal breakdown voltage of 14.525V, and a unidirectional polarity. Suitable for various applications, this trans voltage suppressor diode is perfect for safeguarding sensitive electronic components. Experience peace of mind with the superior performance and value that the D12V0H1U2LP-7B delivers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection against environmental factors and allows for easy handling and installation.

Surface Mount: YES

Enables easy and efficient integration onto circuit boards.

Maximum Non Repetitive Peak Reverse Power Dissipation: 300 W

High power dissipation capability ensures reliable protection against transient surges.

Nominal Breakdown Voltage: 14.525 V

Provides precise protection level for sensitive electronic components.

Maximum Reverse Current: 0.05 uA

Low reverse current ensures minimal impact on circuit performance.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for use in various environments.

Minimum Operating Temperature: -55 °C

Suitable for use in extreme temperature conditions.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient suppression applications, ensuring effective protection.

Technology: AVALANCHE

Avalanche diode technology provides fast response times to transient events.

Technical Specifications

Transient Suppression Devices D12V0H1U2LP-7B attributes and parameters. Explore more Transient Suppression Devices devices from Diodes Incorporated

Specs

Maximum Breakdown Voltage:

15.75 V

Minimum Breakdown Voltage:

13.3 V

Nominal Breakdown Voltage:

14.525 V

Maximum Clamping Voltage:

23 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e4

Maximum Non Repetitive Peak Reverse Power Dissipation:

300 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Reference Standard:

IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

12 V

Maximum Reverse Current:

.05 uA

Reverse Test Voltage:

12 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Trade Compliance

D12V0H1U2LP-7B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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