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ACX114YUQ-7R

Diodes Incorporated

ACX114YUQ-7R by Diodes Incorporated

ACX114YUQ-7R by Diodes Inc. is a Small Signal BJT with NPN/PNP polarity, 2 elements, and built-in resistor. It has hFE of 80, VCE of 50V, and IC of 0.1A. Ideal for applications requiring high transition frequency up to 250MHz in automotive electronics due to AEC-Q101 compliance.

Median Price

$0.300

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,960 parts In-Stock

1+ parts

$0.300

100+ parts

$0.116

1k+ parts

$0.076

10k+ parts

$0.043

2,960

$0.300

$0.116

$0.076

$0.043

Mouser Electronics

USA . 2,294 parts In-Stock

1+ parts

$0.300

100+ parts

$0.074

1k+ parts

$0.066

10k+ parts

$0.038

2,294

$0.300

$0.074

$0.066

$0.038

Verical

USA . 414,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.037

414,000

-

-

-

$0.037

Avnet

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 66,321 parts In-Stock

1+ parts

$0.068

100+ parts

-

1k+ parts

-

10k+ parts

-

66,321

$0.068

-

-

-

Native Components

USA . 892 parts In-Stock

1+ parts

$883.560

100+ parts

$865.889

1k+ parts

$857.053

10k+ parts

$848.218

892

$883.560

$865.889

$857.053

$848.218

Northwest PG Solutions

USA . 1,754 parts In-Stock

1+ parts

$971.916

100+ parts

-

1k+ parts

-

10k+ parts

-

1,754

$971.916

-

-

-

Eastek

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Overview

Unlock a world of possibilities with the ACX114YUQ-7R from Diodes Incorporated. This small signal bipolar junction transistor offers unparalleled quality and performance, making it the go-to choice for a wide range of applications. With its NPN and PNP configuration, built-in resistor, and high DC current gain, this transistor is designed to deliver exceptional reliability and efficiency. Whether you're working on automotive electronics, consumer gadgets, or industrial equipment, the ACX114YUQ-7R is sure to exceed your expectations. Upgrade to Diodes Incorporated today and experience the difference firsthand.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP polarity options allows for versatility in circuit design and compatibility with various applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and reduces the need for additional components, saving time and space.

Surface Mount: YES

Surface mount capability makes for easy and efficient assembly onto circuit boards, ideal for mass production.

Maximum Collector-Emitter Voltage: 50 V

The high voltage rating ensures the transistor can handle a wide range of applications without risk of damage.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, making this transistor a dependable choice for various electronic circuits.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this transistor can withstand the soldering process during assembly without degradation.

Nominal Transition Frequency (fT): 250 MHz

The high transition frequency allows for fast switching and high-frequency operation, making this transistor suitable for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ACX114YUQ-7R attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

BUILT IN BIAS RESISTOR, HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ACX114YUQ-7R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

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