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ACX114EUQ-7R

Diodes Incorporated

ACX114EUQ-7R by Diodes Incorporated

ACX114EUQ-7R by Diodes Incorporated is a Small Signal BJT with NPN and PNP channels, 2 elements with built-in resistor. Features include hFE of 30, VCE of 50V, fT of 250MHz. Ideal for automotive applications meeting AEC-Q101 standard, offering compact design in a small outline package.

Median Price

$0.038

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,711 parts In-Stock

1+ parts

$0.290

100+ parts

$0.071

1k+ parts

$0.063

10k+ parts

$0.041

2,711

$0.290

$0.071

$0.063

$0.041

DigiKey

USA . 2,720 parts In-Stock

1+ parts

$0.380

100+ parts

$0.126

1k+ parts

$0.073

10k+ parts

-

2,720

$0.380

$0.126

$0.073

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Future Electronics

Canada . 2,343,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.038

2,343,000

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-

$0.038

Arrow

USA . 39,000 parts In-Stock

1+ parts

-

100+ parts

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$0.031

39,000

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-

$0.031

Verical

USA . 39,000 parts In-Stock

1+ parts

-

100+ parts

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$0.031

39,000

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$0.031

Avnet

USA . 3,000 parts In-Stock

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3,000

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Distributors (In-Stock)

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NAC Semi

USA . 66,000 parts In-Stock

1+ parts

-

100+ parts

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$0.055

66,000

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-

-

$0.055

IBS Electronics

USA . 21,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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$0.042

21,000

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$0.042

Distributors (Availability)

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Native Components

USA . 908 parts In-Stock

1+ parts

$1.232

100+ parts

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908

$1.232

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Northwest PG Solutions

USA . 1,870 parts In-Stock

1+ parts

$1.355

100+ parts

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1,870

$1.355

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Eastek

USA . 3,000 parts In-Stock

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3,000

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iodParts Technologies Inc.

India . 2,505 parts In-Stock

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2,505

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Overview

Enhance your electronics projects with the ACX114EUQ-7R by Diodes Incorporated. This small signal bipolar junction transistor offers high-quality performance and reliability that you can trust. With NPN and PNP configurations, this component is versatile for a wide range of applications. The built-in resistor and compact design make it easy to integrate into your designs. Trust in Diodes Incorporated's reputation for excellence and choose the ACX114EUQ-7R for all your transistor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides good thermal and electrical insulation, ensuring reliable performance and durability.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP types allows for versatility in circuit design and application compatibility.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB, making it more convenient for designers.

Surface Mount: YES

The surface mount capability makes the transistor easy to integrate into modern PCB designs, saving space and improving assembly efficiency.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient placement on the PCB and facilitates easy routing of traces, contributing to better signal integrity.

No. of Elements: 2

Having two elements in the package allows for more complex circuit configurations and increased functionality within a small footprint.

Minimum DC Current Gain (hFE): 30

A minimum DC current gain of 30 ensures stable and predictable amplification characteristics, essential for reliable signal processing.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating of 50V provides a safety margin and enables operation in a wide range of voltage applications.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistor elements, offering consistent performance and high efficiency in signal amplification.

Maximum Collector Current (IC): 0.1 A

The maximum collector current rating of 0.1 A allows for handling moderate current loads, suitable for a wide range of small signal applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides low contact resistance and good solderability, ensuring reliable connections and consistent performance over time.

Terminal Position: DUAL

Dual terminal positions offer flexibility in layout design and facilitate efficient routing of connections within the circuit.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C allows for robust soldering processes, ensuring secure and durable connections during assembly.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures high reliability and quality, making this transistor suitable for automotive and other demanding applications.

Nominal Transition Frequency (fT): 250 MHz

The high nominal transition frequency of 250 MHz indicates fast switching speeds and enhanced high-frequency performance, ideal for signal processing in various applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ACX114EUQ-7R attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ACX114EUQ-7R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

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